Abstract: Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes.

Abstract: The present invention relates to an apparatus for transferring a substrate. The apparatus includes a supporting member; an elevating and rotating member; a transferring unit; a first arm whose one end is supported by the elevating and rotating member to be rotatable; a second arm whose one end is supported by the transferring unit to be rotatable and whose the other end is supported by the other end of the first arm to be rotatable; and an arm driving part, installed on the first arm, which drives the other end of the second arm to pivot on the other end of the first arm to allow the first arm and the second arm to be folded or unfolded and thus removes the state of singularity by rotating the other end of the second arm based on the other end of the first arm.

Abstract: The present invention relates to an apparatus for transferring a substrate. The apparatus includes a supporting member; an elevating and rotating member; a transferring unit; a first arm whose one end is supported by the elevating and rotating member to be rotatable; a second arm whose one end is supported by the transferring unit to be rotatable and whose the other end is supported by the other end of the first arm to be rotatable; and an arm driving part, installed on the first arm, which drives the other end of the second arm to pivot on the other end of the first arm to allow the first arm and the second arm to be folded or unfolded and thus removes the state of singularity by rotating the other end of the second arm based on the other end of the first arm.

Abstract: The present invention relates to an apparatus for transferring a substrate. The apparatus includes a supporting member; an elevating and rotating member; a transferring unit; a first arm whose one end is supported by the elevating and rotating member to be rotatable; a second arm whose one end is supported by the transferring unit to be rotatable and whose the other end is supported by the other end of the first arm to be rotatable; and an arm driving part, installed on the first arm, which drives the other end of the second arm to pivot on the other end of the first arm to allow the first arm and the second arm to be folded or unfolded and thus removes the state of singularity by rotating the other end of the second arm based on the other end of the first arm.

Abstract: The present invention relates to an apparatus for transferring a substrate. The apparatus includes a supporting member; an elevating and rotating member; a transferring unit; a first arm whose one end is supported by the elevating and rotating member to be rotatable; a second arm whose one end is supported by the transferring unit to be rotatable and whose the other end is supported by the other end of the first arm to be rotatable; and an arm driving part, installed on the first arm, which drives the other end of the second arm to pivot on the other end of the first arm to allow the first arm and the second arm to be folded or unfolded and thus removes the state of singularity by rotating the other end of the second arm based on the other end of the first arm.

Abstract: Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.

Abstract: Provided are an electrode device and an apparatus for generating plasma.

Abstract: Provided are an electrode device and an apparatus for generating plasma.

Abstract: Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.

Abstract: The present invention relates to a method of forming an amorphous carbon film and a method of manufacturing a semiconductor device using the method. An amorphous carbon film is formed on a substrate by vaporizing a liquid hydrocarbon compound, which has chain structure and one double bond, and supplying the compound to a chamber, and ionizing the compound. The amorphous carbon film is used as a hard mask film. It is possible to easily control characteristics of the amorphous carbon film, such as a deposition rate, an etching selectivity, a refractive index (n), a light absorption coefficient (k) and stress, so as to satisfy user's requirements. In particular, it is possible to lower the refractive index (n) and the light absorption coefficient (k). As a result, it is possible to perform a photolithography process without an antireflection film that prevents the diffuse reflection of a lower material layer.

Abstract: There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively.

Abstract: A plasma processing apparatus includes: a chamber; an insulating member disposed in an upper portion of the chamber; a ground electrode formed at a side wall of the chamber, a ground potential being applied to the ground electrode; and a lower electrode disposed in a lower portion of the chamber, a substrate being placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes. According to an aspect of the present invention, particles accumulated in the central portion on a lower surface, an edge area of an upper surface, a side, and an edge area of the lower surface of the substrate can be effectively removed.

Abstract: A plasma processing apparatus includes: a chamber; an insulating member disposed in an upper portion of the chamber; a ground electrode formed at a side wall of the chamber, a ground potential being applied to the ground electrode; and a lower electrode disposed in a lower portion of the chamber, a substrate being placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes. According to an aspect of the present invention, particles accumulated in the central portion on a lower surface, an edge area of an upper surface, a side, and an edge area of the lower surface of the substrate can be effectively removed.