Abstract: An improved method and apparatus for a device with minimized optical cross-talk are provided. In one example, the device includes a filtering material selected to maximize the attenuation of signals causing cross-talk while minimizing the attenuation of desired signals.

Abstract: Provided herein are a circuit and method for dynamically controlling operational amplifier (op-amp) offset for photodetector applications using a variable trimming circuit coupled to a test node and an op-amp.

Abstract: Provided herein are a circuit and method for dynamically controlling operational amplifier (op-amp) offset for photodetector applications using a variable trimming circuit coupled to a test node and an op-amp.

Abstract: Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein.

Abstract: Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein.

Abstract: An improved method and apparatus for a device with minimized optical cross-talk are provided. In one example, the device includes a filtering material selected to maximize the attenuation of signals causing cross-talk while minimizing the attenuation of desired signals.

Abstract: A substrate on which a plurality of epoxy over molded integrated circuit dies are formed includes a beam formed on the substrate for providing stiffness to the substrate. The beam includes structure having a cross-sectional shape, for example, substantially in the shape of a trapezoid, “T” or “L”, and may be formed on the top or bottom surface of the substrate.

Abstract: A substrate on which a plurality of epoxy over molded integrated circuit dies are formed includes a beam formed on the substrate for providing stiffness to the substrate. The beam includes structure having a cross-sectional shape, for example, substantially in the shape of a trapezoid, “T” or “L”, and may be formed on the top or bottom surface of the substrate.

Abstract: A thin film structure for an optical sensor to achieve a wavelength window with nearly ripple free reflection and transmission has different areas of thin film with two or more different thicknesses.

Abstract: A circuit for calibrating optoelectronic devices automatically trims a light sensor based upon a known light condition.

Abstract: A transimpedance amplifier includes a first amplifier, a first MOS resistor device and a first voltage divider circuit. The source terminal of the first MOS resistor device is coupled to the first amplifier inverting input. The voltage divider circuit is coupled between the first amplifier output and the non-inverting input. The output of the first voltage divider is coupled to the first MOS resistor drain terminal. A second amplifier, second MOS resistor device and a second voltage divider circuit is also provided. The output of the second amplifier is coupled to the gate terminal of the first MOS resistor device. The gate terminal of the second MOS resistor device is coupled to the second amplifier output. The drain terminal of the second MOS resistor device is coupled to the second amplifier non-inverting input.

Abstract: A method and apparatus is disclosed for providing highly linear resistance with high sheet values, and for implementing resistors in a conventional CMOS process when either drain or source must operate near the rail of a circuit. Accordingly, a five terminal distributed MOS resistor device includes a drain terminal, a source terminal, and a channel region disposed between the drain terminal and the source terminal. A bulk terminal is adjacent the channel region. A first gate terminal is adjacent the source terminal and a second gate terminal is adjacent the drain terminal. Lastly, a gate region of resistive material is disposed between the first gate terminal and the second gate terminal, wherein upon application of a voltage to the first gate terminal and the second gate terminal, a voltage drop across the gate region is equally distributed along a length of an electrical channel in the channel region.

Abstract: A light to frequency converter includes a temperature coefficient generator, a programmable gain amplifier, and a current controlled oscillator having at least one photodiode configured to receive incident light, the at least one photodiode configured for generating a photodiode control current. The temperature coefficient generator outputs a bandgap reference voltage with temperature coefficient compensation (VBG_TC) in response to a bandgap reference voltage (VBG). The programmable gain amplifier is responsive to the bandgap reference voltage with temperature coefficient compensation (VBG_TC) for outputting an oscillator reference voltage (VREF).

Abstract: A monolithic optical detector for determining spectral content of an incident light includes at least a first and second well in a substrate, the second well formed proximate the first well. The first well is configured to be exposed to incident light and for generating a first photocurrent as a function of the incident light. The second well is configured to be shielded from the incident light and for generating a second photocurrent as a function of the incident light. Lastly, a processing and control unit, responsive to the first and second photocurrents, determines an indication of spectral content of the incident light. A method and device parameter controller are also disclosed.

Abstract: A monolithic optical detector for determining spectral content of an incident light includes at least a first and second well in a substrate, the second well formed proximate the first well. The first well is configured to be exposed to incident light and for generating a first photocurrent as a function of the incident light. The second well is configured to be shielded from the incident light and for generating a second photocurrent as a function of the incident light. Lastly, a processing and control unit, responsive to the first and second photocurrents, determines an indication of spectral content of the incident light. A method and device parameter controller are also disclosed.

Abstract: An integrated circuit for generating a bandgap reference voltage (VBG) includes a first circuit and a second circuit. The first circuit includes an op-amp for equalizing emitter currents of a first bandgap transistor and a second bandgap transistor. The second circuit trims out error in at least one emitter current to achieve a desired frequency tolerance. The second circuit includes at least a single transistor digital to analog converter (DAC).

Abstract: An integrated circuit adapted to output a bandgap reference voltage with temperature coefficient compensation (VBG_TC) includes a first circuit responsive to a bandgap reference voltage (VBG) for generating a temperature stable reference current. A second circuit applies the temperature stable reference current through a current mirror to a current summing junction. A third circuit sums the temperature stable reference current against a current proportional to absolute temperature (IPTAT). Lastly, a fourth circuit converts the summed current into the bandgap reference voltage with temperature coefficient compensation (VBG_TC).