Abstract: The present invention provides, in one embodiment, a method method of monitoring a process for forming a nitridated oxide gate dielectric. A nitrided oxide dielectric layer is formed on a test substrate (110). The nitrided oxide dielectric layer is exposed to an etch process (120). A change in a property of the nitrided oxide dielectric layer is measured as a function of the etch process (130). Other embodiments advantageously incorporate the method into methods for making semiconductor devices and integrated circuits.

Abstract: A bias rail buffer circuit and method in accordance with the present invention overcomes many shortcomings of the prior art. A bias rail buffer circuit for providing a reference signal is suitably configured to absorb external disturbances appearing on an output reference signal. A method for absorbing the external disturbances appearing at the output reference signal suitably includes the use of complementary transistors to source current and sink current to said output reference signal, depending on whether the external disturbances are providing a decrease or an increase to the output reference signal. The bias rail buffer circuit suitably includes an input transistor, a first pair of complementary transistors and a second pair of complementary transistors, such that the second pair of complementary transistors operate to source current and sink current to absorb external disturbances imparted on said output reference signal.

Abstract: A data converter (20). The converter comprises an input (I0-I3) for receiving a digital word. The converter further comprises a string (22) of series connected resistive elements. The string comprises an integer number T of voltage taps (T0′-T8′). The converter further comprises an output (VOUT2) for providing an integer number P of different analog voltage levels in response to the digital word. The integer number P is greater than the integer number T.

Abstract: A method for producing a porous film on a silicon substrate is described. The substrate 14 is placed in a vacuum chamber in the presence of oxygen at specified pressure and temperature for a period of time to form a thin oxide film 10 thereon. Then the conditions in the chamber are altered so that voids 14 of a desired dimension are formed in the oxide film 10. Alternatively, a substrate 20 is subjected to specific conditions in the vacuum chamber whereat oxide islands 22 nucleate on the surface. As the islands grow, they eventually cover most of the surface leaving voids 24 of the desired size.

Abstract: A projector device, which is simple and small and able to display images brighter and also able to improve the usefulness considerably. The effective reflecting lights of the mirror deflection type light modulators are focused into images at the position right in front of the projection lens, and the effective reflection lights are partly turned and focused on the two-dimensional position detector means for detecting the vertical and horizontal positions of the formed images.

Abstract: A TTL gate (22) includes a current generating circuit (24) comprising an NPN transistor (30) having its base coupled to a diode (24) and its emitter coupled to one of the gate's output transistors (14). Transistor (30) enables diode (24) to deliver a high current of short duration to the output OUT responsive to a low-to-high output transition. The current provides low-to-high output transition while protecting output transistor (14) from damaging currents caused by a short circuit at output OUT.