Abstract: A method of forming an integrated deep and shallow trench isolation structure comprises depositing a hard mask on a film stack having a plurality of layers formed on a substrate such that the hard mask is deposited on a furthermost layer from the substrate, imprinting a first pattern into the hard mask to define an open end of a first trench, imprinting a second pattern into the hard mask to define an open end of a second trench, and etching into the film stack the first trench to a first depth and the second trench to a second depth such that the first trench and the second trench each define a blind aperture in the surface of the film stack.

Abstract: A device for coupling electromagnetic radiation from a source into a microwave chamber (20) is configured to be attached to a window (23) of the microwave chamber (20). The device comprises a waveguide (26) and a shield operable to cover an outer part of the window (23) in such a manner as to prevent electromagnetic radiation passing through the outer part. The shield defines an opening (25) configured to expose an inner part of the window (23) in such a manner as to allow electromagnetic radiation to pass through the inner part from the waveguide (26). The opening (25) has a cross-sectional area substantially equal to the cross-sectional area of the waveguide (26).

Abstract: A method of adjusting process variables in a processing flow is disclosed. Processed samples are tested to determine sample parameters of the tested samples. The sample parameters are analyzed analyzing in relation to the process variables applied in the processing steps to determine the impact of the process variables on the sample parameters The process variables are modified in an attempt to change the sample parameters towards predetermined target values. And, the sequence of processing steps is repeated with the modified process variables.