Abstract: An integrated automation development system (10) for controlling and coordinating manufacturing equipment (24) employs a plurality of server processes (14, 16, 22, 28, 34, 36). Each server process includes a messaging manager (45) for receiving ASCII messages, and an interpreter (43) for evaluating the received ASCII messages and identifying commands within the messages. The server process further includes a command manager (41) for receiving and executing the commands, and a logic controller (47) for managing the logic flow of the command execution by the command manager (41). The servers may include additional commands (48) that enable them to serve as queue servers (34), terminal servers (28), and other application-specific server processes.

Abstract: A semiconductor device (76) is provided with a high-voltage portion including NMOS transistor (78) and PMOS transistor (82b) and a low-voltage portion including NMOS transistor (80) and PMOS transistor 82(a). The high-voltage NMOS transistor (78) includes source/drain regions (90a, 90b) having N- regions (90a.sub.1, 90b.sub.1) that are self-aligned with a gate (78) and N+ regions (90a.sub.2, 90b.sub.2) that are self-aligned with sidewall spacers (91) formed on sidewalls of the gate (78) to improve reliability under continuous high voltage operating conditions. The low voltage NMOS transistor includes source/drain regions (92a, 92b) that are self-aligned with sidewall spacers (92) to permit channel lengths to be scaled to less than 2 microns.