Abstract: An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.

Abstract: A method of fabricating a BiCMOS device comprising a first bipolar device and a second bipolar device being of the same dopant type and a BiCMOS device comprising a first bipolar device and a second bipolar device being of the same dopant type A method for fabricating a BICMOS device comprising a first bipolar device and a second bipolar device being of the same dopant type comprises the steps of depositing a dielectric layer (24) over a semiconductor layer (14), depositing a gate conductor layer (26) over the dielectric layer (24), defining base regions (28, 30) of the first and second bipolar devices; removing the gate conductor layer (26) and the dielectric layer (24) in the base regions (28, 30) of the first and second bipolar devices, depositing a base layer (32) on the gate conductor layer (26) and on the exposed semiconductor layer (14) in the base regions (28, 30) of the first and second bipolar devices depositing an insulating layer (36) over said base layer (32), forming a photoresist layer (38) an