Abstract: Retrograde wells are formed by implanting through nitride films (40). Nitride films (40) are formed after STI (20) formation. By selectively masking a portion of the wafer with photoresist (47) after portions of a retrograde well are formed (45, 50, 55, and 60) the channeling of the subsequent zero degree implants is reduced.
Type:
Grant
Filed:
September 28, 2001
Date of Patent:
September 9, 2003
Assignee:
Texas Instruments Incorpated
Inventors:
Mahalingam Nandakumar, Dixit Kapila, Seetharaman Sridhar