Patents Assigned to TF SEMICONDUCTOR SOLUTIONS INC.
  • Publication number: 20160118885
    Abstract: A driver circuit includes three non-contiguous high-voltage wells formed within a low-voltage monolithic silicon substrate; a high-side driver circuit fabricated within each of the wells; a separate logic input path for each of the high-side driver circuits, each input path comprising a logic signal input terminal, a signal amplifier, a noise filter, a pulse generator, and a high-voltage level shifter; an output terminal for each driver circuit, each output terminal coupled to its associated driver circuit output through a separate mask-configurable, variable-value output resistor bank, which reduces the number of external components needed for driver circuitry; a startup circuit which prevents operation of an associated high-side switch during periods of line voltage instability; and embedded capacitor banks, each of which is in close proximity to a high-side switch, for reducing capacitive, resistive and inductance losses associated with long metal lines.
    Type: Application
    Filed: October 24, 2014
    Publication date: April 28, 2016
    Applicant: TF SEMICONDUCTOR SOLUTIONS INC.
    Inventors: Edgar Abdoulin, Jong Deog Jeong