Patents Assigned to Thales and Ecole Polytechnique
  • Patent number: 8115198
    Abstract: In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.
    Type: Grant
    Filed: May 24, 2006
    Date of Patent: February 14, 2012
    Assignee: Thales and Ecole Polytechnique
    Inventors: Paolo Bondavalli, Pierre Legagneux, Pierre Le Barny, Didier Pribat, Julien Nagle