Abstract: A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material.

Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

Abstract: Described is a method and apparatus for producing high purity titanium and high purity titanium so produced. The process contemplates producing titanium sponge in a container and performing titanium fused salt electrolysis in situ in the same container to produce high purity titanium crystal, and where especially low oxygen content is desired, to treat the high purity titanium crystal as produced with iodine.

Abstract: Described is a method and apparatus for producing high purity titanium and high purity titanium so produced. The process contemplates producing titanium sponge in a container and performing titanium fused salt electrolysis in situ in the same container to produce high purity titanium crystal, and where especially low oxygen content is desired, to treat the high purity titanium crystal as produced with iodine.

Abstract: A method is disclosed for producing an anodized film on titanium, its alloys and other metals such that the film deposited will have a specific leak rate of less than one nanoamp per square centimeter at room temperature with an impressed electric field of at least five volts, where the anodization is performed in a solution consisting of liquid ortho-phosphoric acid of reduced water content in an aprotic solvent, and articles of manufacture therefrom.

Abstract: Surface treated titanium and titanium alloy articles having a thin anodized film substantially of TiO.sub.2 and characterized by a leakage current of less than about 25 microamps per square centimeter and a dielectric strength of at least one million volts per square centimeter, together with a high breakdown potential and high corrosion resistance, is disclosed. The process for forming such titanium and titanium alloy articles is also disclosed and is characterized by anodizing the articles in a substantially non-aqueous solution of a mineral acid and an organic solvent at a formation current above 0.1 microamps per square centimeter.