Patents Assigned to The Alta Group, Inc.
  • High purity cobalt sputter target and process of manufacturing the same
    Patent number: 6391172
    Abstract: A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material.
    Type: Grant
    Filed: August 25, 1998
    Date of Patent: May 21, 2002
    Assignee: The Alta Group, Inc.
    Inventors: Robert S. Cole, Mathew S. Cooper, Stephen P. Turner, Yinshi Liu, Michael McCarty, Rodney L. Scagline
  • Tantalum sputtering target and method of manufacture
    Patent number: 6323055
    Abstract: Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: November 27, 2001
    Assignee: The Alta Group, Inc.
    Inventors: Harry Rosenberg, Bahri Ozturk, Guangxin Wang, Wesley LaRue
  • Method for producing titanium crystal and titanium
    Patent number: 6063254
    Abstract: Described is a method and apparatus for producing high purity titanium and high purity titanium so produced. The process contemplates producing titanium sponge in a container and performing titanium fused salt electrolysis in situ in the same container to produce high purity titanium crystal, and where especially low oxygen content is desired, to treat the high purity titanium crystal as produced with iodine.
    Type: Grant
    Filed: December 19, 1997
    Date of Patent: May 16, 2000
    Assignee: The Alta Group, Inc.
    Inventors: Harry Rosenberg, Nigel Winters, Yun Xu
  • Apparatus for producing titanium crystal and titanium
    Patent number: 6024847
    Abstract: Described is a method and apparatus for producing high purity titanium and high purity titanium so produced. The process contemplates producing titanium sponge in a container and performing titanium fused salt electrolysis in situ in the same container to produce high purity titanium crystal, and where especially low oxygen content is desired, to treat the high purity titanium crystal as produced with iodine.
    Type: Grant
    Filed: February 2, 1998
    Date of Patent: February 15, 2000
    Assignee: The Alta Group, Inc.
    Inventors: Harry Rosenberg, Nigel Winters, Yun Xu