Patents Assigned to THE AMERICAN UNIVERSITY IN CAIRO
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Publication number: 20250128988Abstract: A light-emitting concrete composition comprising a cement, such as Portland cement, coarse aggregates, fine aggregates, zinc sulfide, and water. A product, such as an architectural feature, comprising the light-emitting concrete and methods for formulating and mixing it as well as a dry mix suitable to which water can be added to produce the light-emitting concrete. Light-emitting concrete traps solar energy during the daytime and converts it into visible light at night. The light-emitting concrete disclosed herein emits soft light night without any electricity and contributes to energy conservation and low-carbon eco-friendly environment.Type: ApplicationFiled: October 24, 2024Publication date: April 24, 2025Applicant: THE AMERICAN UNIVERSITY IN CAIROInventors: Fatma ELNEFALY, Mayar KHAIRY, Mennatallah SOLIMAN, Zeinab AHMED, Mohamed Nagib ABOU-ZEID
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Patent number: 12283392Abstract: A method for manufacturing an electrical circuit component includes preparing a mixture of a structured material and silkworm food. The method further includes feeding the mixture to at least one silkworm. The method further includes harvesting silk produced by the at least one silkworm, wherein the harvested silk includes at least one silkworm silk fiber including silkworm-digested portions of the structured material embedded in or on the at least one fiber. The method further includes incorporating the at least one fiber into an electrical circuit component.Type: GrantFiled: May 5, 2020Date of Patent: April 22, 2025Assignee: THE AMERICAN UNIVERSITY IN CAIROInventors: Nageh K. Allam, Basant A. Ali
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Publication number: 20240366506Abstract: A composition comprising nanoparticles comprising benzoyl peroxide, benzyl chloride and/or benzalkonium chloride and a method using this composition to kill or inhibit the growth of microorganisms including bacteria and viruses.Type: ApplicationFiled: September 14, 2022Publication date: November 7, 2024Applicant: THE AMERICAN UNIVERSITY IN CAIROInventors: Mousa Elsayed Elsayed SALEM, Wesam Awad Ahmed SARHAN, Saif El-Din Mostafa Mamoon EL-MOFTY, Noha Khalil Samy Aly MAHDY, Abdalla Tarek Riad MOHAMED, Hassan M.E. AZZAZY
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Publication number: 20240076198Abstract: An array of transition metal tubular architectures, where the transition metal tubular architectures are comprised of a transition metal oxide, sulfide, or selenide, and wherein transition metal tubular architectures are less than 100 nm in length. The transition metal tubular architectures can be at least partially crystalline. Within the array of transition metal tubular architectures, at least 80% of the transition metal tubular architectures can be less than 100 nm in length.Type: ApplicationFiled: November 10, 2023Publication date: March 7, 2024Applicant: THE AMERICAN UNIVERSITY IN CAIROInventors: Menna Tulla Samir KAMEL, Nageh K. ALLAM
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Patent number: 11858828Abstract: An array of transition metal tubular architectures, where the transition metal tubular architectures are comprised of a transition metal oxide, sulfide, or selenide, and wherein transition metal tubular architectures are less than 100 nm in length. The transition metal tubular architectures can be at least partially crystalline. Within the array of transition metal tubular architectures, at least 80% of the transition metal tubular architectures can be less than 100 nm in length.Type: GrantFiled: December 28, 2020Date of Patent: January 2, 2024Assignee: THE AMERICAN UNIVERSITY IN CAIROInventors: Menna Tulla Samir Kamel, Nageh K. Allam
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Publication number: 20210292183Abstract: An array of transition metal tubular architectures, where the transition metal tubular architectures are comprised of a transition metal oxide, sulfide, or selenide, and wherein transition metal tubular architectures are less than 100 nm in length. The transition metal tubular architectures can be at least partially crystalline. Within the array of transition metal tubular architectures, at least 80% of the transition metal tubular architectures can be less than 100 nm in length.Type: ApplicationFiled: December 28, 2020Publication date: September 23, 2021Applicant: THE AMERICAN UNIVERSITY IN CAIROInventors: Menna Tulla Samir KAMEL, Nageh K. ALLAM
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Patent number: 10698711Abstract: A multi-tier cloud-metering framework for metering cloud resources is presented. The proposed framework is capable of relating metering indicator of distributed resources contributing to the same application and located at different architectural levels. Metering data is collected from the front-end, the cloud nodes and VMs, and propagated through the middle-tier of the metering architecture to be processed and stored at the back-end. The design of the metering framework adopts a service-oriented architecture which allow the processing of cloud metering objects CMOs using service processing over open web transport protocol. To be able to build the middle and back-end tier, a SOA based on IPIoE and BOSML is presented which allow full consolidation of cloud resources achieving scalability and reducing the amount of wasted resources due to cloud resources de-fragmentation.Type: GrantFiled: April 1, 2016Date of Patent: June 30, 2020Assignee: THE AMERICAN UNIVERSITY IN CAIROInventors: Karim Mohamed Sobh, Amr Ahmed El-Kadi
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Patent number: 10175175Abstract: Novel Zr-based metal-organic framework (MOF) chemosensors useful for detection, recognition, removal, and separation of heavy metals are provided. Also provided are methods for preparation of the chemosensors and processes for detection, recognition, removal, and separation of heavy metals using the chemosensors.Type: GrantFiled: February 11, 2014Date of Patent: January 8, 2019Assignee: THE AMERICAN UNIVERSITY IN CAIROInventors: Hassan Azzazy, Ahmed Shahat, Hassan M. A. Hassan
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Publication number: 20120225557Abstract: Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from ?80 degrees Celsius to ?140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.Type: ApplicationFiled: March 1, 2012Publication date: September 6, 2012Applicants: THE AMERICAN UNIVERSITY IN CAIRO, KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Mohamed Serry, Andrew Rubin, Mohamed Refaat, Sherif Sedky, Mohammad Abdo