Abstract: The present invention provides novel photobioreactors, modules thereof, and methods for use in culturing and harvesting algae and cyanobacteria.

Abstract: Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.

Abstract: The present invention provides devices and methods for testing the electrical performance of thin-film transistor backplane arrays and protecting thin-films during testing and handling.

Abstract: Methods and devices for stimulating nerves are disclosed. In one embodiment adapted for stimulating excitable tissue, the invention includes drive circuitry, an acoustic transducer and a pair of electrodes.

Abstract: Photodiode devices with GeSn active layers can be integrated directly on p+ Si platforms under CMOS-compatible conditions. It has been found that even minor amounts of Sn incorporation (2%) dramatically expand the range of IR detection up to at least 1750 nm and substantially increases the absorption. The corresponding photoresponse can cover of all telecommunication bands using entirely group IV materials.

Abstract: The present invention provides methods, compositions, and kits for nucleic acid detection.

Abstract: Flexible substrates can be temporarily attached to a rigid carrier for processing a surface thereof by depositing a joining material at one or more contact points between a flexible substrate and a rigid carrier, contacting the flexible substrate and the rigid carrier at the one or more contact points; and exposing the one or more contact points to a temperature of between 219° C. and 1000° C. and under conditions suitable for attaching the flexible substrate and the rigid carrier at the one or more contact points via the joining material. Examples of suitable joining materials include, but are not limited to soldering or brazing materials. Such supported substrates can be used for preparing flexible displays comprising at least one electronic component and/or circuit on a surface of the flexible display.

Abstract: Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided for preparing laterally varying II-VI alloy layers over at least a portion of a surface of a substrate comprising contacting at least a portion of a surface of a substrate within a reaction zone with a chemical vapor under suitable reaction conditions to form a laterally varying II-VI alloy layer over the portion of the surface of the substrate, wherein the chemical vapor is generated by heating at least two II-VI binary compounds; and the reaction zone has a temperature gradient of at least 50-100° C. along an extent of the reaction zone. Also described here are devices such as lasers, light emitting diodes, detectors, or solar cells that can use such semiconductor structures.

Abstract: The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.

Abstract: Described herein are semiconductor structures comprising (i) a Si substrate; (ii) a buffer region formed directly over the Si substrate, wherein the buffer region comprises (a) a Ge layer having a threading dislocation density below about 105 cm?2; or (b) a Ge1-xSnx layer formed directly over the Si substrate and a Ge1-x-ySixSny layer formed over the Ge1-xSnx layer; and (iii) a plurality of III-V active blocks formed over the buffer region, wherein the first III-V active block formed over the buffer region is lattice matched or pseudomorphically strained to the buffer region. Further, methods for forming the semiconductor structures are provided and novel Ge1-x-ySixSny, alloys are provided that are lattice matched or pseudomorphically strained to Ge and have tunable band gaps ranging from about 0.80 eV to about 1.4O eV.

Abstract: Methods and devices of stimulating nerves are disclosed. In one embodiment adapted for stimulating excitable tissue, the invention includes drive circuitry (12), an acoustic transducer (14) and a pair of electrodes (28).

Abstract: The present invention provides a self anchoring electrode for recording, measuring and/or stimulating nerve activity in nerves and/or nerve fascicles of the peripheral nervous system, and methods for using such a self anchoring electrode.

Abstract: The present invention relates to algal species and compositions, methods for identifying algae that produce high lipid content and possess CO2 tolerance, and methods for using such algae for lipid isolation, wastewater remediation, waste gas remediation, and/or biomass production.

Abstract: The present invention relates to algal species and compositions, methods for identifying algae that produce high lipid content, possess tolerance to high CO2, and/or can grow in waste streams, and methods for using such algae for waste stream remediation and biomass production.

Abstract: A nozzle for producing a single-file stream of droplets of a fluid, methods using the nozzle, and an injector, comprising the nozzle of the invention, for providing the single-file stream of droplets of a fluid to a high-vacuum system are described. The nozzle comprises two concentric tubes wherein the outer tube comprises a smoothly converging-diverging exit channel and the outlet end of the first tube is positioned within the converging section of the exit channel.

Abstract: The present invention provides reagents and methods for biomaterial production from cyanobacteria.

Abstract: Methods and devices of stimulating nerves are disclosed. In one embodiment adapted for stimulating excitable tissue, the invention includes drive circuitry (12), an acoustic transducer (14) and a pair of electrodes (28).

Abstract: The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.

Abstract: A method is provided for converting a two-dimensional image or bitmap of a handwritten manuscript into three-dimensional data The three-dimensional data can be used to automatically recognize features of the manuscript, such as characters or words. The method includes the steps of: converting the two-dimensional image into three-dimensional volumetric data; filtering the three-dimensional volumetric data; and processing the filtered three-dimensional volumetric data to resolve features of the two-dimensional image. The method can be used, for example, to differentiate between ascenders, descenders, loops, curls, and endpoints that define the overall letter forms in handwritten text, manuscripts or signatures.

Abstract: A method of ion cleaving using microwave radiation is described. The method includes using microwave radiation to induce exfoliation of a semiconductor layer from a donor substrate. The donor substrate may be implanted, bonded to a carrier substrate, and heated via the microwave radiation. The implanted portion of the donor substrate may include increased damage and/or dipoles (relative to non-implanted portions of the donor substrate), which more readily absorb microwave radiation. Consequently, by using microwave radiation, an exfoliation time may be reduced to 12 seconds or less. In addition, a presented method also includes the use of focused ion beam implantation to achieve a pattern-less transfer of a semiconductor layer onto a carrier substrate.