Abstract: A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer.

Abstract: TRFs useful for identifying strains of interest are provided. A method of identifying one or more strain that can be used as a direct-fed microbial is also provided. One or more strain identified by the method is additionally provided. A method is also provided for administering to an animal an effective amount of the one or more strain. Additionally provided is an isolated strain chosen from at least one of Lactobacillus acidophilus strain PlB c6 (NRRL B-50103), Lactobacillus salivarius strain o246e 33w (NRRL B-50102), Pediococcus acidilactici strain o246e 42 (NRRL B-50171), and Pediococcus acidilactici strain PlJ e3 (NRRL B-50101). An isolated strain having all of the identifying characteristics of one of the strains listed above is also provided. One or more strain can be administered as a direct-fed microbial to an animal. Methods of preparing a direct-fed microbial are also provided.

Abstract: A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.