Abstract: The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.

Abstract: Microstructured, irregular surfaces pose special challenges but coatings of the invention can uniformly coat irregular and microstructured surfaces with one or more thin layers of phosphor. Preferred embodiment coatings are used in microcavity plasma devices and the substrate is, for example, a device electrode with a patterned and microstructured dielectric surface. A method for forming a thin encapsulated phosphor coating of the invention applies a uniform paste of metal or polymer layer to the substrate. In another embodiment, a low temperature melting point metal is deposited on the substrate. Polymer particles are deposited on a metal layer, or a mixture of a phosphor particles and a solvent are deposited onto the uniform glass, metal or polymer layer.