Abstract: A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

Abstract: A combined scintillation crystal includes: at least one scintillation crystal A module and a scintillation crystal B module. The scintillation crystal A module and the scintillation crystal B module are scintillation crystal modules with different performances. The scintillation crystal A module comprises at least one scintillation crystal A, and the scintillation crystal B module comprises at least one scintillation crystal B. The sensitivity of the scintillation crystal A is lower than the sensitivity of the scintillation crystal B, and the light output ability of the scintillation crystal A is higher than the light output ability of the scintillation crystal B. The scintillation crystal B module includes a ray incidence plane for receiving rays, and the at least one scintillation crystal module A is arranged at the outer side of the ray incidence plane of the scintillation crystal B module.

Abstract: A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.

Abstract: A display device includes a driving transistor, an organic light emitting diode (OLED), a first switch, and a second switch. The driving transistor has a first terminal (e.g., a drain terminal) and a second terminal (e.g., a source terminal). The OLED includes a first terminal coupled to the second terminal of the driving transistor. The first switch is configured to couple the first terminal of the driving transistor to a first voltage (e.g., VDD) to turn on the OLED, and to couple the first terminal to an intermediate voltage to turn off the OLED. The second switch is configured to couple a second electrode of the OLED to a second voltage (e.g., VSS) to turn on the OLED, and to couple the second electrode of the OLED to the intermediate voltage to turn off the OLED. The intermediate voltage is in between the first voltage and the second voltage.

Abstract: Provided is a semiconductor device capable of reducing a mounting area. A semiconductor device (100) includes a semiconductor element (50) and a control element (150) arranged on a front surface (50a) of the semiconductor element (50). The semiconductor element (50) includes a semiconductor substrate (SB) including a first region AR1 and a second region AR2 adjacent to each other, a first MOS transistor (Tr1) provided is the first region (AR1), and a second MOS transistor (Tr2) provided in the second region (AR2). A first drain region (3a) of the first MOS transistor (Tr1) is connected to a second drain region (3b) of the second MOS transistor (Tr2). The control element (150) turns on and off the first MOS transistor (Tr1) and the second MOS transistor (Tr2).

Abstract: The invention provides a method for manufacturing a MEMS microphone, including the steps of: providing a base and preparing a first diaphragm on a first surface of the base; preparing a back plate on a surface of the first diaphragm opposite to the first surface; forming a first gap between the first diaphragm and the back plate; preparing a second diaphragm; forming a second gap between the second diaphragm and the back plate; preparing electrodes; forming a back cavity by etching the surface opposite to the first surface.

Abstract: An auto-latching latch assembly is mounted to a follower door of a double door. The latch assembly includes a latch movable between an unlatching position and a latching position and a movable member jointly movable with the latch. A positioning member is jointly pivotable with the movable member. When the latch moves to the unlatching position, the positioning member positions the latch in the unlatching position. When the follower door is closed while a primary door of the double door is closed, an actuation latch presses against and releases the positioning member to move the latch to the latching position, reliably locking the follower door.

Abstract: A memory card comprising a first main surface and a second main surface opposing each other, and including a printed circuit board (PCB) constituting the first main surface, the PCB including a plurality of first external connection terminals, the plurality of first external connection terminals exposed on the first main surface, a plurality of memory devices stacked on the PCB, a memory controller configured to control the plurality of memory devices, a molding layer encapsulating the plurality of memory devices and the memory controller, the molding layer constituting the second main surface, and one or more second external connection terminals electrically connected to the memory controller, the one or more second external connection terminals embedded in the molding layer and exposed by the molding layer on the second main surface may be provided.

Abstract: A vehicle-mounted image processing device 1000 acquires an image around a host vehicle 10, senses a feature amount of a target object present on a road surface from the image, and relative position coordinates with respect to the host vehicle 10, acquires information of a three-dimensional object around the host vehicle 10 and relative position coordinates of the three-dimensional object, distinguishes whether the feature amount is a feature amount of a feature on the road surface or a feature amount of a feature on the three-dimensional object by using a positional relationship between the feature amount and the three-dimensional object, and recognizes the target object by using a feature on the road surface. As a result, a vehicle-mounted image processing device, which is capable of avoiding misrecognition of a part of a three-dimensional object as a target object when sensing the target object present on a road surface such as a parking bay by using a camera image, is provided.

Abstract: A lithium secondary battery includes an electrode group and a nonaqueous electrolyte having lithium ion conductivity. A negative electrode includes a negative electrode current collector. The negative electrode current collector has a first surface facing an outward direction of winding of the electrode group and a second surface facing an inward direction of the winding of the electrode group. Lithium metal is deposited on the first surface and the second surface by charge. The negative electrode further includes first protrusions protruding from the first surface and second protrusions protruding from the second surface. A ratio A1X/A1 is less than a ratio A2X/A2. A1X is a sum of projected areas of the first protrusions on the first surface. A1 is an area of the first surface. A2X is a sum of projected areas of the second protrusions on the second surface. A2 is an area of the second surface.

Abstract: The invention provides a method for manufacturing a MEMS microphone. The method comprises steps of: preparing a base; forming a first diaphragm on a first surface of the base; preparing a back plate; forming a first gap between the first diaphragm and the back plate; preparing a second diaphragm opposite to the first diaphragm; forming a second gap between the second diaphragm and the back plate; preparing electrodes on the second diaphragm; forming a back cavity by etching a second surface of the base opposite to the first surface.

Abstract: Provided is a polycarbonate-based resin composition, including 0.

Abstract: A support for household appliance comprises a hydraulic plate with an internal liquid flow passage; a sheath fixedly connected with the hydraulic plate; a regulating support arranged in the sheath and axially movable relative to the sheath; and an accommodation chamber formed by the hydraulic plate, the sheath and the regulating support. A flexible accommodation body accommodates a liquid medium in the accommodation chamber, and extends and retracts to drive the regulating support in the sheath for leveling under the action of pressure. The flexible accommodation body is provided with an opening part mounted on the hydraulic plate in a sealed manner and communicates with the liquid flow passage. Th A hydraulic medium in the flexible accommodation body can circulate into the liquid flow passage and flow to the liquid outlet nozzle through the liquid flow passage.

Abstract: A backlight unit includes a first light guide plate, a second light guide plate disposed over the first light guide plate, and a first wavelength conversion layer disposed between the first light guide plate and the second light guide plate.

Abstract: An electronic device includes a processor, a volatile memory, and a non-volatile memory. The non-volatile memory stores a first operating system, and the electronic device works in a first working mode and a second working mode. When the electronic device is in the first working mode, a second operating system is run in the volatile memory. When the processor detects that the electronic device reaches a preset condition for entering the second working mode, the non-volatile memory is enabled, and non-system data in the volatile memory is moved to the non-volatile memory. The non-system data does not include the second operating system. After the movement of the non-system data is completed, the volatile memory is disabled, and the first operating system is run in the non-volatile memory, so that the electronic device enters the second working mode.

Abstract: An organic light emitting diode (OLED) display includes a first substrate, a second substrate facing the first substrate, a sealing member interposed between the first substrate and the second substrate, the sealing member including a siloxane material, a semiconductor layer on the first substrate, a planarization layer on the semiconductor layer, and a barrier rib on the planarization layer. The planarization layer or the barrier rib may also include the siloxane material.