Abstract: The disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a data transmission rate higher than that of a 4th generation (4G) system, such as long-term evolution (LTE). The disclosure relates to authentication and authorization for edge computing applications, and an operation method of a user equipment (UE) in a wireless communication system. The method may include transmitting, to a server, a first message including at least one of information related to the UE or a type of user agent, performing an authentication procedure for an edge computing service according to an authentication method determined based on the first message, receiving a second message indicating authority granted to the edge computing service, based on an authentication code generated by the server according to the performed authentication procedure, and using the edge computing service in a range corresponding to the granted authority.

Abstract: Disclosed is a method and apparatus for generating an image. The apparatus includes at least one processor and a memory. The processor is configured to obtain a wide image of an entire region, obtain one or more teleimages of one or more regions of interest (ROIs) of the entire region using a telecamera according to a capturing order of the telecamera determined for the one or more ROIs based on the wide image, match the wide image and the one or more teleimages, warp the one or more teleimages to the wide image based on a result of the matching, and stitch the one or more warped teleimages based on the wide image.

Abstract: An electrode structure includes a base layer including a first active material, and a plurality of active material plates on a first surface of the base layer and spaced apart from one another, the plurality of active material plates including a second active material. An active material density of the base layer is less than an active material density of an active material plate of the plurality of active material plates.

Abstract: A redundant array of independent disks (RAID) management method includes, when detecting that a component in a storage medium fails, recovering, based on a RAID policy, data stored in the failed component, saving the recovered data into a pre-defined redundant space of the RAID, and mapping an address of the failed component with the address of the redundant space, converting, according to the mapping, an address of to-be-accessed data comprised in an accessing request into an address within the redundant space, and accessing the to-be-accessed data from the redundant space according to the address within the redundant space.

Abstract: An engagement assembly, a drawer, and a refrigerator having same. The engagement assembly comprises a first engagement part matching the drawer and a second engagement part matching a refrigerator body; one of the first and second engagement parts is a gear, and the other one is a rack; the rack has a tooth surface that allows the gear to travel; the rack comprises a main rack and an extension rack; when the drawer is in a closed state, the tooth surface has a first stroke length; when the drawer is in an opening process, the extension rack moves to a travel path of the gear so that the tooth surface has a second stroke length; when the drawer is in a closing process, the extension rack is reset; the first stroke length is smaller than the second stroke length. The length of the tooth surface increases in the opening process.

Abstract: Disclosed is an LCD device which realizes decreased thickness, simplified process, and decreased cost by using a common electrode for formation of electric field to drive liquid crystal as a sensing electrode, and removing a touch screen from an upper surface of the liquid crystal panel, the LCD device comprising gate and data lines crossing each other to define plural pixels on a lower substrate; a pixel electrode in each of the plural pixels; plural common electrode blocks patterned at the different layer from the pixel electrode, wherein the common electrode blocks, together with the pixel electrode, forms an electric field, and senses a user's touch; and plural sensing lines electrically connected with the common electrode blocks, wherein, if the sensing line is electrically connected with one of the common electrode blocks, the sensing line is insulated from the remaining common electrode blocks.

Abstract: The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.

Abstract: An apparatus for estimating bio-information, includes a sensor including a cover having a transmitting area provided at a center of the cover, and non-transmitting areas provided at both edges of the cover, a light source configured to emit light onto an object that is in contact with the cover, and a detector configured to detect a first optical signal of the emitted light that is scattered or reflected from the object after passing through the transmitting area, and a second optical signal of the emitted light that is reflected from the non-transmitting areas. The apparatus further includes a processor configured to estimate bio-information, based on the detected first optical signal and the detected second optical signal.

Abstract: A method of producing a multi-layer ceramic electronic component includes: forming a base film formed from an electrically conductive material on a surface of a ceramic body including internal electrodes laminated and drawn to the surface in such a manner that the base film is connected to the internal electrodes; forming a first nickel film on the base film by an electrolytic plating method; performing, after forming the first nickel film, heat treatment in a weakly reducing atmosphere at a temperature equal to or higher than a temperature at which the first nickel film is recrystallized; and forming a second nickel film on the first nickel film, on which the heat treatment is performed, by an electrolytic plating method.

Abstract: With a pneumatic tire not mounted on a rim, in a meridian cross-section a first line is parallel with an innermost bottom side of a bead core in a radial direction and passes through an outermost projection of the bead core in a lateral direction, a second line is orthogonal with the first line at the outermost projection, a third line is orthogonal with the first line and passes through an intersection of a rim cushion rubber, a distance between the second and third lines is 2.0 to 4.0 mm, a shortest distance between an innermost projection of the bead core in the lateral direction and a cord of a carcass layer is 0.6 to 1.4 mm, and a shortest distance between an innermost end of the bottom side of the bead core in the lateral direction and the cord of the carcass layer is 1.2 to 2.2 mm.

Abstract: A heat dissipation device is configured for a working fluid to flow therethrough. The heat dissipation device includes a base and at least one heat dissipation fin. The base has at least one internal channel configured for the working fluid to flow therethrough. The at least one heat dissipation fin having an extension channel and an inlet and an outlet is in fluid communication with the extension channel. The at least one heat dissipation fin is inserted into one side of the base, and the extension channel is communicated with the at least one internal channel through the inlet and the outlet.

Abstract: A semiconductor device includes a substrate, two source/drain (S/D) regions over the substrate, a channel region between the two S/D regions and including a semiconductor material, a deposited capacitor material (DCM) layer over the channel region a dielectric layer over the DCM layer and a metallic gate electrode layer over the dielectric layer.

Abstract: A charging device and a charging system are provided. The charging device includes a charging portion and a plurality of magnetic attracting portions. The plurality of magnetic attracting portions are arranged symmetrically with respect to the charging portion. Each of the plurality of magnetic attracting portions includes an N pole and an S pole. At least one of the N poles and/or at least one of the S poles serves as an attracting function pole of the magnetic attracting portion, and a pair of attracting function poles symmetrical with respect to the charging portion are different in polarity.

Abstract: Provided is an electronic pen core body including a tip component portion coupled to an axis component portion. At least one end of the axis component portion in an axial direction is made of a material that is harder than a material from which the tip component portion is made. The axis component portion includes a recessed hole and a fitting portion directly or indirectly fitted to a pen pressure detector. The tip component portion includes a tip portion protruding from the one end of the axis component portion in the axial direction, a coupling core portion disposed within the recessed hole and coupled to an inner wall surface of the recessed hole of the axis component portion, and a second ring-shaped end surface that contacts a first ring-shaped end surface of the axis component portion. The first ring-shaped end surface is covered by the second ring-shaped end surface.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.