Abstract: A tooling set for stamp forming a workpiece includes a first stamping tool, a second stamping tool and an elastomeric layer between the first and second stamping tools. The first stamping tool defines a first forming face. The second stamping tool defines a second forming face. The elastomeric layer defines first and second compliant stamping surfaces. A method for stamp forming a workpiece includes positioning a workpiece between the first stamping tool and the elastomeric layer and compressing the workpiece between the first forming face and the first compliant stamping surface in response to the first and second stamping tools being approximated. A system for stamp forming a workpiece includes the tooling set.

Abstract: GAAFET threshold voltages are tuned by introducing dopants into a channel region. In a GAAFET that has a stacked channel structure, dopants can be introduced into multiple channels by first doping nano-structured layers adjacent to the channels. Then, by an anneal operation, dopants can be driven, from surfaces of the doped layers into the channels, to achieve a graduated dopant concentration profile. Following the anneal operation and after the dopants are diffused into the channels, depleted doped layers can be replaced with a gate structure to provide radial control of current in the surface-doped channels.

Abstract: A load control device may control power delivered from a power source, such as an alternating-current (AC) power source, to at least two electrical loads, such as a lighting load and a motor load. The load control device may include multiple load control circuit, such as a dimmer circuit and a motor drive circuit, for controlling the power delivered to the lighting load and the motor load, respectively. The load control device may adjust the rotational speed of the motor load in a manner so as to minimize acoustic noise generated by the load control device and reduce the amount of time required to adjust the rotational speed of the motor load. The load control device may remain powered when one of the electrical loads (e.g., the lighting load) has been removed (e.g., electrically disconnected or uninstalled) and/or has failed in an open state (has “burnt out” or “blown out”).

Abstract: Various processes and configuration are provided for a chemical recycling facility that can lower the carbon footprint and global warming potential of the facility. More particularly, we have discovered numerous ways for reducing the carbon footprint of the facility by: (i) recycling at least a portion of the residual heat energy from the pyrolysis effluent back upstream to the pyrolysis process and waste plastic liquification stage; (ii) recovering at least a portion of the carbon dioxide from at least a portion of the pyrolysis flue gas and/or the pyrolysis gas; (iii) feeding at least a portion of the pyrolysis gas at a cracker facility at a position downstream of a cracker furnace; (iv) using at least a portion of a demethanizer overhead stream as a fuel in a pyrolysis facility and/or a cracking facility; and (v) providing a chemical recycling facility that contains a pyrolysis facility co-located with a cracking facility.

Abstract: In an interactive processing method, a virtual scene is displayed by an electronic device. The virtual scene includes a first virtual object. An identifier of at least one second virtual object is displayed in response to a clicking/tapping operation on a skill control of the first virtual object. An identifier of at least one target second virtual object selected by the first sliding operation is indicated in response to a first sliding operation for the identifier of the at least one second virtual object. The first sliding operation being performed by maintaining contact of the clicking/tapping operation. The first virtual object to release at least one target skill at a release position of the first sliding operation is controlled. The at least one target skill being a skill possessed by the at least one second virtual object.

Abstract: A semiconductor structure includes a gate, a self-aligned contact (SAC) layer that is disposed on the gate and that has a seam at a top surface of the SAC layer, a gate spacer that is formed on a sidewall of the gate, and a metal contact that is disposed adjacent to the gate spacer and that is spaced apart from the gate by the gate spacer. The SAC layer includes a filler that seals the seam in the SAC layer, and a top surface of the filler is coplanar with a top surface of the gate spacer and a top surface of the metal contact.

Abstract: A service data packet processing method, performed by a network-side network element, includes: receiving characteristic assistance data transmitted by an application-side network element for a service flow; performing characteristic parameter inferencing based on the characteristic assistance data to obtain a target characteristic parameter of the service flow; and processing a first service data packet of the service flow based on the obtained target characteristic parameter, wherein the characteristic assistance data includes data associated with a first characteristic of the service flow.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A package structure is provided over a substrate, wherein the package structure includes a plurality of device dies and a filling material filling a gap between adjacent two of the plurality of device dies. A thermal spreader layer is provided over the package structure, wherein the thermal spreader layer has a profile that is discontinuous in thickness at a gap region aligned with the gap. A lid structure is provided over the substrate and in contact with the thermal spreader layer.

Abstract: A method and an apparatus for recognizing a lane line based on LiDAR are disclosed. The method includes acquiring candidate points of a lane line around an ego vehicle by using a LiDAR sensor, determining at least one straight line by using the candidate points, and determining a curve using final points corresponding to the at least one straight line.

Abstract: A seat control apparatus includes an input device, a driving device, a memory that stores instructions, and a control device electrically connected to the input device, the driving device, and the memory. The seat control apparatus identifies an operating mode included in an operation input when receiving the operation input to a target seat through the input device, identifies a specified state of at least one adjacent seat adjacent to the target seat based on the operating mode, allows the at least one adjacent seat to be in the specified state by using the driving device, and allows the target seat to be in the operating mode by using the driving device.

Abstract: A process of producing an article by an extrusion blow molding manufacturing process is provided comprising: melting a copolyester in an extruder to produce a molten copolyester; extruding the molten copolyester through a die to form a tube of molten copolyester parison; clamping a mold having the desired finished shape around the parison; blowing air into the parison causing the parison to stretch and expand to fill the mold to produce a molded article; cooling the molded article; ejecting the article from the mold; and removing excess plastic from the article; wherein the copolyester comprises: at least one terephthalate monomer residue; ethylene glycol residues; a combination of diethylene glycol and at least one glycol residue selected from the group consisting of 1,4-cyclohexanedimethanol residues, monopropylene glycol residues, and 2,2,4,4-tetramethyl-1,3-cyclobutane diol residues; and a germanium catalyst present in the copolyester at a concentration of about 5 to about 500 ppm based on elemental germa

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first n-type transistor having a first threshold voltage and including a first gate dielectric layer, and a second n-type transistor having a second threshold voltage and including a second gate dielectric layer. The first threshold voltage is lower than the second threshold. Each of the first gate dielectric layer and the second gate dielectric layer contains fluorine and hafnium. The first gate dielectric layer has a first average fluorine concentration and a first average hafnium concentration. The second gate dielectric layer has a second average fluorine concentration and a second average hafnium concentration. A first ratio of the first average fluorine concentration to the first average hafnium concentration is greater than and a second ratio of the second average fluorine concentration to the second average hafnium concentration.

Abstract: A gas turbine air intake system uses a filter element having a seal member with radial projections and radial recesses. The seal member forms a seal with components on the tube sheet of the system and at the end opposite of the tube sheet. At the end opposite of the tube sheet, there can be an assembly cover, or alternatively, an additional filter cartridge.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes a substrate, a layer stack, and a plurality of composite pillar structures. The layer stack is disposed on the substrate. The layer stack includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The composite pillar structures respectively penetrate through the layer stack. Each composite pillar structure includes a dielectric pillar; a pair of conductive pillars penetrating through the dielectric pillar and electrically isolated from each other through a portion of the dielectric pillar; a channel layer covering both sides of the dielectric pillar and the pair of conductive pillars; a ferroelectric layer disposed between the channel layer and the layer stack; and a buffer layer disposed between the channel layer and the ferroelectric layer.

Abstract: A seat control apparatus may receive a switch input from a user, through an input part. The seat control apparatus may also identify the side location of the seat by the first driving part and a reclining angle of the seat by the second driving part. The seat control apparatus may also identify a specific target state based on at least one of a type of a switch corresponding to the switch input, a corresponding function, a location section including the slide location, an angle section including the reclining angle, or any combination thereof. The seat control apparatus may also control a location of the seat such that the location of the seat corresponds to the specific target state by using at least one of the first driving part, the second driving part, or any combination thereof.

Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.

Abstract: Examples relate to machine readable storage storing machine readable instructions, arranged when implemented, to process a roller encoder signal, associated with rotation of a substrate engaging roller, and a drive encoder signal, associated with a drive for rotating a carrier bearing the substrate, to determine a characteristic associated with the substrate.

Abstract: A method for forming a semiconductor device structure includes forming a fin structure over a substrate. The method also includes forming a dummy gate structure across the fin structure. The method also includes depositing a spacer layer over the fin structure and the dummy gate structure. The method also includes implanting dopants into the spacer layer to form a first doped region vertically overlapping the dummy gate structure and a second doped region over the fin structure without vertically overlapping the dummy gate structure. A middle region of the spacer layer connects the first doped region and the second doped region. The method also includes removing the first doped region and the second doped region of the spacer layer. The method also includes forming a source/drain structure attached to the fin structure after removing the first doped region and the second doped region of the spacer layer.

Abstract: Memory stacks and method of forming the same are provided. A memory stack includes a bottom electrode layer, a top electrode layer and a phase change layer between the bottom electrode layer and the top electrode layer. A width of the top electrode layer is greater than a width of the phase change layer. A first portion of the top electrode layer uncovered by the phase change layer is rougher than a second portion of the top electrode layer covered by the phase change layer.

Abstract: A golf club head including a slot is disclosed herein. In accordance with the presently disclosed technology, the golf club head may include a striking face, a crown, a sole, and a slot. The striking face may include a lower striking face portion including a sole return, which includes a slot adjacent the leading edge. The sole may include a rear sole portion extending to the sole return.