Abstract: In a semiconductor device of the present invention, a MOS transistor is disposed in an elliptical shape. Linear regions in the elliptical shape are respectively used as the active regions, and round regions in the elliptical shape is used respectively as the inactive regions. In each of the inactive regions, a P type diffusion layer is formed to coincide with a round shape. Another P type diffusion layer is formed in a part of one of the inactive regions. These P type diffusion layers are formed as floating diffusion layers, are capacitively coupled to a metal layer on an insulating layer, and assume a state where predetermined potentials are respectively applied thereto. This structure makes it possible to maintain current performance of the active regions, while improving the withstand voltage characteristics in the inactive regions.

Abstract: The object is to provide a simplified but highly efficient fuel cell system, permitting to perform the flame off detection and so on without supplying the burner with additional raw fuel, even if a flame rod system flame detection means is adopted as burner for reformer. The invention concerns a fuel cell system, comprising a reformer for reforming a hydrocarbon base fuel such as natural gas into hydrogen, a CO transformer, a CO eliminator, a fuel cell for generating electricity from hydrogen, and a burner for reformer for burning hydrogen gas discharged from the fuel cell and supply the reformer with heat necessary for reforming reaction, wherein the burner for reformer is provided with a flame rod system flame detection means and, at the same time, supplied with hydrogen gas containing a flame detectable amount of fuel gas.

Abstract: A camera module for small-sized electronic apparatuses such as digital cameras and cellular phones includes a lens unit; and a holder which houses the lens unit and is displaceable along an optical axis direction of the lens unit. A coil is provided on the holder of octagon shape in cross section having eight outside surface portions with a yoke having an outer cylindrical wall portion formed to have an octagon shape similar to the octagon shape of the coil and having eight magnet mounting inner surfaces. Eight flat plate-shaped magnets on the mounting surfaces for providing a magnetic field are arranged to face the outside surface portions of the coil through a predetermined constant spacing. Upper and lower leaf springs respectively support the holder so as to be displaceable along the optical axis direction of the lens unit; a base for supporting the yoke and the lower spring.

Abstract: A driving device includes an electro-mechanical transducer having first and second end portions opposite to each other in an expansion/contraction direction, a static member coupled to the first end portion of the electro-mechanical transducer, a vibration friction portion coupled to the second end portion of the electro-mechanical transducer, and a rod-shaped moving portion frictionally coupled to the vibration friction portion, whereby moving the moving portion in the expansion/contraction direction of the electro-mechanical transducer. An outer sheath is for covering the driving device. An attitude retaining arrangement retains an attitude of the driving device with respect to the outer sheath.

Abstract: A fuel cell system includes a fuel cell, a fuel tank, a first passage which supplies liquid fuel from the fuel tank to the fuel cell, a cartridge holder in which a plurality of types of cartridges are replaceably loaded, a second passage which supplies the content discharged from the cartridge to the fuel cell, a cartridge detector which detects the type of cartridge loaded in the cartridge holder, and a passage control means which controls the passages in accordance with the type of cartridge detected.

Abstract: A semiconductor device for improving performance of a p-channel transistor and an n-channel transistor having multi-finger structures. Gates of the n-channel transistor are arranged so that their gate width direction is parallel to one side of a first region. Gates of the p-channel transistor are arranged so that their gate width direction extends at an angle of 45 degrees with respect to one side of a second region. The ratio of a maximum gate width of the p-channel transistor arranged in the second region to the pitch between the gates of the p-channel transistor is set in accordance with the ratio of the area of an ineffective region to the area of the second region.

Abstract: A material gas and a catalyst are introduced through a material supplying tube path and a catalyst supplying tube path together with a carrier gas into a reactor equipped on its outer periphery with a heat applicator for thermally decomposing the material gas. The reactor has a convention regulator fitted to the discharge end of the catalyst supplying tube path. The convection regulator covers an edge side of the reactor to regulate gas flow in the reactor so that the flow does not reach the edge side. Due to this, a convection state can be efficiently produced in a reaction region. Consequently, it becomes possible to prevent contamination defect caused by accumulation/adherence of concretion of catalyst, which was generated by aggregation of cooled catalyst in the low-temperature region of the reactor and a decomposition product of the material gas. Thus the efficiency of carbon nanostructure production can be improved.

Abstract: A television receiver includes an OSD display section configured to display a desired OSD, and a voice input section to which voices are inputted. The receiver also includes a storage section having prestored therein a control code associated with a voice representing a command to change channels or an analogous command, and a call-up control code associated with a voice for causing the display section to display a character image in an OSD manner. The receiver further includes a control section configured to cause the display section to display the character image associated with the call-up control code when a voice associated with the call-up control code is inputted through the voice input section. The control section instructs components of a receiver body to perform respective operations for executing the command according to the control code only during a time period during which the display section displays the character image.

Abstract: When an information processing device has been connected to this audio server via a network, an evaluation request means of this audio server requests this connected information processing device to notify evaluations for items of audio contents which that information processing device has downloaded in the past. And, when an evaluation for some item of audio contents has been received from an information processing device which has been requested to provide notification of evaluations for items of audio contents by the evaluation request notification means, a summarization means of this audio server summarizes a plurality of evaluations for that item of audio contents, using the evaluation obtained this time. And a summarized results notification means of this audio server notifies the result of summarization by said summarization means to the information processing device which provided this evaluation of that item of audio contents this time.

Abstract: An optical disk device includes a BE control means which issues a request for recording of data upon an optical disk. Furthermore, this optical disk device includes an FE processing means which, upon receipt of the recording request from the BE control means, irradiates laser light from a pickup head onto the optical disk, and records data stored in a buffer RAM upon the optical disk. If an error has occurred during the recording of the data upon the optical disk by the FE processing means, then the BE control means first acquires, from the FE processing means, error information including an error occurrence address. And the BE control means performs control to execute recovery processing, according to this error information.

Abstract: To stabilize the weight balance of an entire liquid crystal display device by locating a lateral shaft by which the lower end of a support leg is attached to a base either directly under or substantially directly under the center of gravity of a main unit having a liquid crystal module. A main unit 1 in which a liquid crystal module 2 is housed in a cabinet 3 is supported so as to allow tilt adjustment, by a support leg 6 that rises up from a base 5. An attachment component 61 of the support leg 6 is overlapped with and fastened by screws on the outer back face of a metal plate 22 of the liquid crystal module 2, the result being that a lateral shaft 7 for attaching the support leg 6 to the base 5 is located directly under the center of gravity G of the main unit 1.

Abstract: In the present invention, an npn junction is formed by circularly forming a p? type impurity region and n+ type impurity regions on a same single-crystalline substrate as a MOS transistor. Multiple npn junctions are formed apart from each other in concentric circular patterns. With this configuration, steep breakdown characteristics can be obtained, which results in good constant-voltage diode characteristics. Being formed in a manufacturing process of a MOS transistor, the present protection diode contributes to process streamlining and cost reduction. By selecting the number of npn junctions according to breakdown voltage, control of the breakdown voltage can be facilitated.

Abstract: A main semiconductor region of semiconducting nitrides is formed on a silicon substrate via a buffer region of semiconducting nitrides to provide devices such as HEMTs, MESFETs and LEDs. In order to render the wafer proof against warping, the buffer region is divided into a first and a second multilayered buffer subregion. The first buffer subregion comprises multiple alterations of a multi-sublayered first buffer layer and a non-sublayered second buffer layer. Each multi-sublayered first buffer layer of the first buffer subregion comprises multiple alternations of a first and a second buffer sublayer. The second buffer sublayers of each multi-sublayered first buffer layer either do not contain aluminum or do contain it in a higher proportion than do the first buffer sublayers. The second multilayered buffer subregion comprises multiple alternations of a first and a second buffer layer.

Abstract: An optical disk device includes a recording and reading means which performs recording of data upon, or reading of data from, an optical disk upon which are stored an ID, number of times information, and recording management information. Furthermore, when recording of data upon the optical disk has been completed, this optical disk device stores the recording management information, the number of times information, and the ID of the optical disk in a storage means in mutual correspondence. And, when the optical disk has been mounted, the recording and reading means decides whether a first situation or a second situation holds, using the ID and the number of times information of the optical disk as a key. And, if the second situation holds, the recording and reading means utilizes the recording management information in the storage means.

Abstract: A first light feedback element is arranged at an optical distance L1 from a front facet of a semiconductor laser from which an output light is emitted on an optical path of the output light. An i-th light feedback element is arranged at an optical distance Li from the front facet on the optical path of the output light, where i=2 to n, n is a positive integer not less than 2, and Li>L1. L1 and Li satisfies ((M?1)+0.01)<(Li/L1)<(M?0.01), where M is a positive integer not less than 2, satisfying (M?1)<(Li/L1)?M.

Abstract: A signal detection circuit of a magnetic sensor includes a differential amplifier to which an output voltage of a detecting coil of the magnetic sensor is applied; a comparator to which the output of the differential amplifier is input, the comparator outputting a digital signal having one logical value during a time period between two adjacent spike voltages included in the output voltage; and a counter that counts the number of pulses of a clock in a period when the output of the comparator has one logical value.

Abstract: This image sensor includes a charge transfer region transferring signal charge, a transfer electrode formed on the surface of the charge transfer region through a first insulating film, an increasing portion provided on the charge transfer region for increasing the signal charge and a transistor, provided on a region other than the charge transfer region, having a second insulating film smaller in thickness than the first insulating film.

Abstract: An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.

Abstract: Provided is a charging system wherein a voltage and a current can be accurately supplied from a power supply device even with a cable wiring resistance and a connector contact resistance, and the power supply device can be commonly used even for a plurality of kinds of electronic circuit devices whereupon different secondary cells are mounted. The charging system is provided with an electronic circuit device (50) having a secondary cell (E2), and a power supply device (10) which can be connected/removed to and from the electronic circuit device and supplies power for charging the secondary cell when connected. In the charging system, a detection signal for charge control is transmitted from the electronic circuit device (50) to the power supply device (10), and the control circuit (12) controls output from an SW power supply circuit (11) based on the detection signal.

Abstract: A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to provide an electron transit layer comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections are formed on unmasked parts of the substrate surface whereas the V-notch-surfaced section, defining a V-sectioned notch, is created by lateral overgrowth onto the antigrowth mask. Aluminum gallium nitride is then deposited on the electron transit layer to provide an electron supply layer which is likewise comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections of the electron supply layer are sufficiently thick to normally generate two-dimensional electron gas layers due to heterojunctions thereof with the first and the second flat-surfaced section of the electron transit layer.