Abstract: A target object detection apparatus is provided. The apparatus includes a transmitter, a receiver, a threshold determiner, a parameter setter, a parameter selector, and a timing controller. The transmitter repeatedly transmits a transmission pulse at a transmission timing. The receiver receives a reception signal at a reception timing set based on the transmission timing. The threshold determiner determines whether an amplitude value of the reception signal exceeds a predetermined threshold at every sampling point and counts the number of sampling points at which the amplitude value of the reception signal exceeds the threshold. The parameter setter sets a plurality of different parameters for controlling the transmission timing. The parameter selector selects the parameter from the parameter settings, to minimize the number of sampling points counted by the threshold determiner. The timing controller controls the transmission timing, based on the parameter selected by the parameter selector.

Abstract: A method of manufacturing a MOS-type semiconductor device capable of increasing the thickness of a gate oxide film and obtaining high gate withstanding power and reduced switching loss without increasing a gate threshold voltage Vth is provided. A p-type well region is selectively formed on one principle surface of a semiconductor substrate having an n-type low impurity concentration layer by using an oxide film as a mask. Subsequently, a resist mask is formed on the surface of the p-type well region so as to be separated from the oxide film mask, and an n+-type source region is selectively formed from the separation portion. Subsequently, the oxide film mask is removed. Then, an oxide film is formed on the surface of the p-type well region, and the oxide film is removed. Subsequently, a gate electrode coated with a gate oxide film is formed on the surface of the semiconductor substrate.

Abstract: A projector includes a projection portion including a laser beam generation portion and a scanning portion scanning a laser beam, projecting an image, a light detection sensor provided separately from the projection portion, including a light receiving portion receiving the laser beam reflected by a detection object, and a control portion acquiring the position of the detection object on the image on the basis of a detection result of the laser beam.

Abstract: A delay circuit using a capacitor with an MOS structure as a delay component, includes a clamp circuit operating a clamp operation and a clamp release operation in response to levels of an input signal, the clamp circuit clamping a voltage applied to the capacitor to a specified charging initiation voltage during the clamp operation; a charging circuit charging the capacitor with a constant current when the clamp operation is released; and a delayed signal producing circuit producing a delayed signal when the voltage of the capacitor being charged reaches a voltage of a predetermined value.

Abstract: A display device includes a display panel that displays images and comprises a an outer frame, a light irradiating part that irradiates light toward a back surface of the display panel, a heat radiating plate that radiates heat generated by the light irradiating part and is grounded, a plurality of protective members provided along the outer frame of the display panel, wherein at least one of the plurality of protective members is an opposing protective member that opposes the heat radiating plate, and a conductive member interposed between and electrically connects the opposing protective member and the heat radiating plate.

Abstract: A printhead including one or more fluid vias in fluid communication with a fluid supply, each of the one or more fluid vias being associated with a first number of heating elements, the heating elements being divided into groups of a second number of heating elements so as to form a number of primitive groups, and an electrical interface having at least one shift register that receives primitive address data to allow for selective application of electrical signals to the heating elements so that fluid is ejected from the printhead in accordance with image data, the number of primitive groups being dependent on the print resolution of the printhead so that a number of bits required for the at least one shift register to address each heater is independent of the print resolution of the printhead.

Abstract: An integrated circuit device, for a power supply that is connected to an AC power source via an input circuit having a capacitor, is able to reliably discharge the capacitor when the AC power source is interrupted. The integrated circuit device includes a first discharge circuit that operates in response to an internal supply voltage and discharges the capacitor via a first switch element that is turned on when the input voltage provided via the input circuit falls below a set voltage, and a second discharge circuit having a second switch element that is turned off when receiving the internal supply voltage but is turned on in response to the input voltage when the supply of internal supply voltage is interrupted.

Abstract: Embodiments provide a backlight control method and device and a liquid crystal display device, which relate to the liquid crystal display field and are used to achieve the purposes of meeting the requirements on different image quality enhancements in different display regions of the liquid crystal screen and improving the display quality and the sense of display layering of pictures. The method comprises: dividing n backlight subregions into m backlight regions; acquiring an average backlight value of each backlight region among the m backlight regions; searching, from a pre-acquired gain search table, a gain value corresponding to the average backlight value of each backlight region among the m backlight regions; adjusting backlight values of backlight subregions contained in each backlight region correspondingly according to the gain value corresponding to each backlight region; and outputting adjusted backlight values of the n backlight subregions.

Abstract: A vehicle headlight can be configured such that the size of the vehicle headlight which includes a semiconductor laser element employed as a light source is reduced. The vehicle headlight can includes: a projection lens disposed on an optical axis extending in a front-to-rear direction of a vehicle body; a light-emitting device including a semiconductor laser element configured to emit a laser beam and a light-transmitting member configured to absorb and convert the wavelength of at least part of the laser beam from the semiconductor laser element; and a first reflection surface configured to reflect the light from the light-emitting device so as to transmit and project forward the resulting light through the projection lens.

Abstract: An optical fiber bundle is used in a vehicle headlight, the optical fiber bundle being configured by binding a plurality of optical fibers. Each optical fiber can include a core having an incident end face on which a laser beam is made incident and an emission end face from which the laser beam is emitted. A clad can surround the core. Emission end faces of the respective plurality of optical fibers can be arranged adjacent to one another on a substantially same plane to create an emission end face group, an external shape of which is a substantial rectangle.

Abstract: The surface panel includes a transmissive resin layer and a sensor film closely attached to a back surface of the resin layer. The sensor film includes a base film, a frame-shaped decorative portion on a front surface of the base film, and a transmissive electrode layer and right and left wiring layers on a back surface of the base film. The sensor film is closely attached to and along the back surface of the resin layer. The right and left wiring layers are closely attached to the corresponding right and back-surface left portions. Consequently, the area that is allocated for the transmissive region and the electrode layer can be increased.

Abstract: Disclosed are a submodule structure formed of an energy storage element, a first turn-off device, a second turn-off device, a third turn-off device, a freewheeling diode, a series resistor, and diodes respectively in antiparallel connection with the turn-off devices, and a converter completely or partially formed of the submodules. Also disclosed are a relevant protection unit and a control method for the converter. The converter can be locked when a direct current (DC) fault occurs to prevent an alternating current (AC) system from injecting a fault current into a DC network, so that a transient fault of the DC network can be removed without tripping an AC line switch, thereby rapidly restarting the system. A charging resistor is comprised in the submodule so that a charging resistor disposed at an AC side of the converter can be reduced and even may not be disposed.

Abstract: On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H2 and H2O without including O2. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.

Abstract: A semiconductor device includes: an insulating substrate including an insulating plate and a circuit board on the insulating plate; a semiconductor chip having an electrode on a front surface thereof, a back of the semiconductor chip being fixed to the circuit board; a printed circuit board that faces the circuit board and the front surface of the semiconductor chip; and one or more conductive posts each having one end connected via solder to the circuit board or to the electrode on the semiconductor chip, another end connected to the printed circuit board, and one or more grooves that extend from said one end of the conductive post that contacts the solder to said another end of the conductive post connected to the printed circuit board.

Abstract: An oxide superconductor includes: a substrate made of a metal; an insulating intermediate layer provided on the substrate; an oxide superconducting layer provided on the intermediate layer; a metal stabilizing layer provided on the oxide superconducting layer; and a plurality of dividing grooves which divide the metal stabilizing layer and the oxide superconducting layer along a longitudinal direction of the substrate, reach the inside of the intermediate layer through the oxide superconducting layer from the metal stabilizing layer, and do not reach the substrate. The metal stabilizing layer and the oxide superconducting layer are divided to form a plurality of filament conductors by the plurality of dividing grooves, and in each dividing groove of the plurality of dividing grooves, a width of a groove opening portion of the dividing groove is equal to or greater than a width of a groove bottom portion of the dividing groove.

Abstract: A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an interlayer dielectric to cover the device structure; forming a contact hole through the interlayer dielectric; forming a transition metal film (e.g., Ni) on a portion of the semiconductor substrate exposed by the contact hole; (e) forming a metal film (e.g., Ti) on the entire surface of the semiconductor substrate; forming an oxide film in the surface of the metal film; selectively removing the metal film in which the oxide film has been formed, to thereby expose the transition metal film; and (h) exposing, to a hydrogen plasma atmosphere, the semiconductor substrate in which the transition metal film and the oxide film have been exposed, to thereby cause the transition metal film to generate heat and react with the semiconductor substrate and form an ohmic contact there between.

Abstract: A gate pad electrode and a source electrode are disposed, separately from one another, on the front surface of a super junction semiconductor substrate. A MOS gate structure formed of n source regions, p channel regions, p contact regions, a gate oxide film, and polysilicon gate electrodes is formed immediately below the source electrode. The p well regions are formed immediately below the gate pad electrode. The p channel regions are linked to the p well regions via extension portions. By making the width of the p well regions wider than the width of the p channel regions, it is possible to reduce a voltage drop caused by a reverse recovery current generated in a reverse recovery process of a body diode.

Abstract: In a semiconductor device, an IGBT and an SJMOSFET connected in parallel have respective gate terminals controlled independently of each other. When a high voltage occurs and a high current flows caused by short-circuit in an external circuit under a condition of ON state of the IGBT and SJMOSFET, an operational amplifier in the control IC detects the overcurrent through the IGBT and controls the gate signal to restrict the current through the IGBT. After that, the operational amplifier throttles the current through the IGBT according to a reference voltage of a capacitor decreasing by the discharge through a constant current source, thus conducting soft-OFF operation of the IGBT.

Abstract: A semiconductor device includes: a semiconductor element having a gate and source electrodes; an insulating substrate which is provided with an insulating plate, a first circuit plate and a second circuit plate, the first circuit plate provided in a main surface of the insulating plate to be electrically connected to the gate electrode, the second circuit plate provided in the main surface to surround the first circuit plate and to be electrically connected to the source electrode; a first terminal, being column-shaped and electrically and mechanically connected to the first circuit plate; and a second terminal which is provided with a cylindrical body portion and support portions, the body portion has a through hole into which the first terminal is inserted with a gap, the support portions disposed in end portions of the body portion and electrically and mechanically connected to the second circuit plate.

Abstract: An electronic device includes a device main unit; and a controller that displays on a display visual demonstration of an energy setting of the device main unit, wherein the controller displays, before receiving an operation that enables the energy setting, a state of the device main unit in which the energy setting is enabled.