Abstract: An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonator. A current confinement layer including a selectively oxidized portion is arranged on an upper side of the strained active layer. The current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.

Abstract: A semiconductor electronic device comprises a substrate; a buffer layer formed on the substrate, the buffer layer including not less than two layers of composite layer in which a first semiconductor layer formed of a nitride-based compound semiconductor layer having a lattice constant smaller than a lattice constant of the substrate and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate and a second semiconductor layer formed of a nitride-based compound semiconductor having a lattice constant smaller than a lattice constant of the first semiconductor layer and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate are alternately laminated; an intermediate layer provided between the substrate and the buffer layer, the intermediate layer being formed of a nitride-based compound semiconductor having a lattice constant smaller than a lattice constant of the first semiconductor layer and a thermal expansion coefficient larger than a t

Abstract: An optical fiber, made of silica-based glass, comprising a core and a cladding. The optical fiber having a mode field diameter of 6.5 ?m or larger at a wavelength of 1300 nm, transmitting light with a wavelength of 1250 nm in a single mode, and having a bending loss of 1 dB/turn or smaller at a wavelength of 1300 nm when the optical fiber is bent with a curvature radius of 1.5 mm.

Abstract: A three-dimensional light reflection plate that can successfully prevent deformation of the light reflection plate, reduce initial cost and product cost, and facilitate increase in size and reflectance. The light reflection plate includes a bottom plate in which a plurality of mutually parallel slit holes are formed on a flat, light-reflective plate material and a mountain plate that is rectangular from a planar view of which a width direction cross-sectional shape is a mountain shape and in which insertion sections are formed in both width-direction end sections. The mountain plate is fixed to the bottom plate by the insertion sections of the mountain plate being inserted into the slit holes of the bottom plate.

Abstract: An electromagnetic shielding copper foil superior in electromagnetic shielding ability, high in transmittance, and free from particle shedding comprising a copper foil on at least one surface of which a fine roughening particle layer of copper or an alloy is provided and having on the fine roughening particle layer a smoothening layer comprised of cobalt, nickel, indium, or an alloy of the same and an electromagnetic shield able to be suitably used for a PDP using the same. The fine roughening particle layer may also be a layer comprised of a fine particle roughening particle layer of copper on which a fine roughening particle layer of a copper alloy is stacked or may also be formed by a copper-cobalt-nickel alloy. The smoothening layer of the copper foil may be treated for stainproof or by a silane coupling agent to protect the surface of the copper foil.

Abstract: A semiconductor device includes a field effect transistor formed of a GaN-based compound semiconductor and having a source electrode, a drain electrode, and a gate electrode, and a diode formed of a semiconductor material having a gandgap energy smaller than a bandgap energy of the GaN-based compound semiconductor. A cathode electrode and an anode electrode of the diode are electrically connected to the source electrode and the gate electrode of the field effect transistor, respectively.

Abstract: A Raman amplifying device includes a plurality of Raman amplifiers having a gain wavelength characteristic with a gain peak at which an amplification gain becomes the largest, including a first Raman amplifier having a gain wavelength characteristic with a plurality of gain peaks including a first gain peak and a second gain peak adjacent to the first gain peak; a second Raman amplifier having a gain wavelength characteristic with at least one gain peak including a third gain peak between the first gain peak and the second gain peak; and a third Raman amplifier having a gain wavelength characteristic with a fourth gain peak between the first gain peak and the third gain peak, the fourth gain peak forming an arithmetic sequence between the first gain peak and the third gain peak.

Abstract: A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

Abstract: Disclosed is a power supply apparatus for a sliding door. The power supply apparatus includes a body-side fixture mounted on an automobile body, a door-side fixture mounted on the sliding door, and a flat cable gripped in the body-side fixture and the door-side fixture for supplying a power to the sliding door. The flat cable is pulled out from the body-side fixture and/or the door-side fixture to form a convex flexural portion during opening and closing of the sliding door. The flat cable pull-out direction conforms with the protrusion direction of the convex flexural portion.

Abstract: A holey fiber includes a core region formed at a center of the fiber and a cladding region formed on an outer circumference of the core region. The cladding region has a plurality of air holes arranged in a layered structure around the core region. The air holes are arranged in a triangular lattice such that a wavelength dispersion value at a wavelength of 1050 nm is in a range from ?10 ps/nm/km to 10 ps/nm/km when ? is in a range from 2 ?m to 5 ?m and d/? is in a range from 0.3 to 0.75, where d is hole diameter of each of the air holes in micrometers and ? is lattice constant of the triangular lattice in micrometers.

Abstract: A conductor of an electric cable for wiring, containing a copper alloy material containing 1.0 to 4.5 mass % of Ni, 0.2 to 1.1 mass % of Si, and the balance of Cu and unavoidable impurities, in which the copper alloy material has an average grain diameter of 0.2 to 5.0 ?m.

Abstract: An optical integrated circuit 1 according to the present invention includes a planar lightwave circuit 2, and a semiconductor element 3, which are fixed at one contact surface 12. A semiconductor optical amplifier (SOA) 9 is formed on a semiconductor substrate 8. A semiconductor waveguide 10 and a semiconductor waveguide 11 are formed on an input side and an output side of SOA 9, respectively. The semiconductor waveguide 11 has a turnaround portion 11a turned around on the semiconductor substrate 8. Respective ends of the optical waveguides 5 and 6 on a PLC platform 4 and respective ends of semiconductor waveguides 10 and 11 are optically coupled with each other at the contact surface 12.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, and a layer structure including a first reflector, an active layer, and a second reflector, which are consecutively layered on the substrate, and a plurality of holes arranged in a two-dimensional structure periodically within a layer plane except for a specified area of the layer structure, wherein a pair of holes sandwiching therebetween the specific area and opposing each other have a dimension or shape different from the dimension or shape of others of the holes.

Abstract: A method of producing a copper alloy wire rod, containing: a casting step for obtaining an ingot by pouring molten copper of a precipitation strengthening copper alloy into a belt-&-wheel-type or twin-belt-type movable mold; and a rolling step for rolling the ingot obtained by the casting step, which steps are continuously performed, wherein an intermediate material of the copper alloy wire rod in the mid course of the rolling step or immediately after the rolling step is quenched.

Abstract: An arrayed waveguide grating optical multiplexer/demultiplexer 10 of the present invention 10 comprises one arrayed waveguide grating (AWG) 20 having two input waveguides 21, 22 and two output waveguide-groups 23, 24, and a Mach Zehnder Interferometer-type interleaver 30 integrated with the AWG 20. Each of the input waveguides 21, 22 is formed by a Mach Zehnder Interferometer having the same free spectral range as the frequency spacing of the AWG. The Interferometer includes a 3 dB coupler 51 connected to the 3 dB coupler 32, a 100% coupler 52, a waveguide delay line 53 with an optical path length difference ?L of 4.1 mm formed between the couplers 51, 52, and a phase shifter 54 of ? formed between the 100% coupler 52 and a 3 dB coupler 55 connected to the first slab waveguide 25.

Abstract: There are provided an optical fiber ribbon and optical fiber cable which suppress the deterioration of polarization mode dispersion and contribute to the increase of communication capacity in wavelength division multiplexing. An optical fiber ribbon includes a plurality of optical fibers 12 tied in a bundle and a ribbon coating layer 13 formed around the plurality of optical fibers to integrate the plurality of optical fibers, wherein the glass-transition temperature of the coating ranges from 80° C. to 130° C. and “a” is 0.01 mm2 or less, where “a” is a sectional area of the ribbon coating layer 13 in a cross section in which outer half of the optical fiber at an edge of the ribbon and the coating of the optical fiber ribbon are taken along a line passing the center of the glass optical fiber positioned at one of edges of the ribbon out of the plurality of the optical fibers and being perpendicular to the horizontal plane of the optical fiber ribbon.

Abstract: An optical transmission line includes a first optical fiber and a second optical fiber connected to the first optical fiber. The first optical fiber includes a core region formed at a center of the fiber and a cladding region formed around the core region. The cladding region includes air holes formed in a triangular lattice around the core region. The first optical fiber has a negative wavelength dispersion and a dispersion per slope of ?200 nm to ?50 nm at a wavelength of 1050 nm. The second optical fiber has a positive wavelength dispersion and the dispersion per slope of ?800 nm to ?50 nm at the wavelength of 1050 nm.

Abstract: An aluminum conducting wire, containing a stranded conductor that is formed by stranding solid conductors of an aluminum alloy, in which the aluminum alloy comprises 0.1 to 1.0 mass % of Fe, 0.05 to 0.5 mass % of Cu, and 0.05 to 0.4 mass % of Mg, in which the total amount of Cu and Mg is 0.3 to 0.8 mass %, with the balance being aluminum and inevitable impurities, and a solid conductor of an aluminum alloy for the aluminum conducting wire.

Abstract: A colored optical fiber whose transmission loss hardly increases even in a high humidity condition or water-immersed condition is provided. The colored optical fiber according to the present invention is a colored optical fiber having a colored coating layer on a circumference of an optical fiber having at least two coating layers on a circumference of a glass optical fiber, characterized in that a difference in each amount of thermal expansion in an outer diameter direction between the optical fiber and a coating layer obtained by removing the glass optical fiber from the optical fiber in a temperature range from ?100° C. to 100° C. is 1.8 ?m or less.