Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.
Type:
Grant
Filed:
November 24, 2006
Date of Patent:
June 17, 2014
Assignee:
The Hong Hong University of Science and Technology