Patents Assigned to The Industry & Academic Cooperation in Chungnam National Universtiy (IAC)
  • Methods of making heterojunction devices
    Patent number: 8288190
    Abstract: The present invention provides methods of making junction devices, such as, fabrication methods. In certain embodiments, the junction device is a graphene/oxide semiconductor Schottky junction device or graphene/oxide semiconductor p-n heterojunction device. In certain instances, the Schottky junction device comprises graphene vapor-deposited directly on thin films, nanowires, nanotubes, nanobelts or nanoparticles, while the p-n heterojunction device is manufactured by doping the graphene of the Schottky junction device.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: October 16, 2012
    Assignee: The Industry & Academic Cooperation in Chungnam National Universtiy (IAC)
    Inventor: Eui-Tae Kim