Abstract: Provided is a multifunctional lithography device, including: a vacuum substrate-carrying stage configured to place a substrate and adsorb the substrate on the vacuum substrate-carrying stage by controlling an airflow, so as to control a gap between the substrate and the mask plate; a mask frame arranged above the vacuum substrate-carrying stage and configured to fix the mask plate; a substrate-carrying stage motion system arranged below the vacuum substrate-carrying stage and configured to adjust a position of the vacuum substrate-carrying stage, so that a distance between the substrate and the mask plate satisfies a preset condition; an ultraviolet light source system arranged above the mask plate and configured to generate an ultraviolet light for lithography; and a three-axis alignment optical path system configured to align the ultraviolet light with the mask plate.

Abstract: The present disclosure provides a visible light-transparent and radiative-cooling multilayer film, including N layers of films which have different thicknesses and are arranged alternately. The visible light-transparent and radiative-cooling multilayer film adopts a new film layer arrangement, so that the multilayer film has an extremely high visible light transmittance while achieving radiative cooling. Among others, the multilayer film is composed of two materials having high visible light-transmittance. Since there is a difference between dielectric constants of the two materials, a resonant cavity or resonant cavities may be formed among material layers. The resonant cavity may enhance the electric field therein, thereby increasing the radiance of the structure greatly. The present disclosure has the advantages of simple structure, easy to process, good cooling effect, high visible light transmittance and low cost.

Abstract: A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Abstract: Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.

Abstract: The present disclosure provides a secondary imaging optical lithography method and apparatus.

Abstract: Provided is a method of fabricating a micro-nano structure, including: forming a reflective layer and a fluid polymer layer sequentially on a surface of a substrate; pressurizing the substrate and a mask having a micro-nano pattern to attach to each other, squeezing the fluid polymer layer into a light-transmission area of the mask, and curing the fluid polymer layer; and exposing, wherein a fluid polymer in the light-transmission area is configured to sense light under a combined effect of a transmitted light and a light reflected by the reflective layer, such that a micro-nano structure is obtained. The method solves the problem of limited diffraction, improves the processing resolution by reducing the transmission loss of evanescent waves through reflective light field enhancement, and reduces the difficulty and cost of mask processing and pattern defects by using shallow pressurizing in combination with exposure.

Abstract: A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Abstract: The present disclosure provides a sub-wavelength structural material having compatibility of low detectability for infrared, laser, and microwave, which includes, from top to bottom, a metal type frequency selective surface layer I, a dielectric layer I, a metal type frequency selective surface layer II, a dielectric layer II, a resistive film, a dielectric layer III. Each of the metal type frequency selective surface layers is a sub-wavelength patch type array, and metal used by the metal type frequency selective surface layers has a characteristic of low infrared emissivity. The present disclosure modulates a phase by using a phase difference generated by patches with different sizes on the metal type frequency selective surface layer I, so as to control backscattering of incident electromagnetic waves to achieve compatibility of low detectability for laser and infrared, while the bottom three layers achieve absorption of microwave.

Abstract: Disclosed is a stitching-measurement device adapted for performing stitching-measurement on a surface of a concave spherical lens, including: an interferometer, a reference lens, a first plane mirror, a second plane mirror, a first adjustment mechanism, a second adjustment mechanism, a concave spherical object to be measured, a motion table and a control mechanism, the first plane mirror being mounted on the first adjustment mechanism configured to change a position of the first plane mirror; the second plane mirror being mounted on the second adjustment mechanism configured to change a position of the second plane mirror; the concave spherical object to be measured being placed on the motion table configured to change a position of the concave spherical object to be measured; the control mechanism communicating with the interferometer, the first adjustment mechanism, the second adjustment mechanism, and the motion table for issuing control signals, wherein by the first adjustment mechanism and the second adj

Abstract: A detection device adapted to detect lens surface and a stitching interferometer including the same are disclosed.

Abstract: Disclosed is a three-dimensional adjustment mechanism for performing precise adjustment of an optical element in a high-resolution imaging system. The three-dimensional adjustment mechanism includes three elastic adjustment members uniformly distributed to conduct an axial displacement adjustment and a tilt adjustment of the optical element. The three elastic adjustment members are uniformly arranged at a bottom of the optical element, and configured to perform dynamic adjustment for the optical element with high precision on basis of deformations of the elastic adjustment members.

Abstract: A method for figure correction of an optical element includes forming a masking layer on a surface of the optical element. The optical element has thinning regions and non-thinning regions. The masking layer is patterned to form masking regions and non-masking regions, and the masking layer is positioned relative to the optical element in such a manner that the masking regions corresponds to the non-thinning regions of the optical element and the non-masking regions corresponds to the thinning regions of the optical element. The method further includes performing reactive ion etching on the optical element provided with the masking layer so as to etch the thinning regions of the optical element to reduce a thickness of the thinning region.

Abstract: The present disclosure provides a flexible hinge structure including: a rigid driving member; a mounting fixed member which is connected to an upper surface of the rigid driving member through a first flexible portion at one end in a longitudinal direction of the upper surface, a first fixing structure being provided on a surface of the mounting fixed member; a displacement output member connected to the upper surface of the rigid driving member through a second flexible portion at the other end in the longitudinal direction of the upper surface; and a pair of guiding fixed members symmetrically disposed on both sides of the displacement output member through third flexible portions, the both sides being parallel to the longitudinal direction of the upper surface of the rigid driving member and a second fixing structure being provided on a surface of each of the guiding fixed members.

Abstract: The present disclosure proposes an apparatus for coating photoresist and a method for coating photoresist. The apparatus for coating photoresist comprises a gas supply unit (10) configured to supply gas to a photoresist application unit (20); wherein the photoresist application unit (20) comprises: a device cavity (202) enclosed by sidewalls, a bottom plate and a cover plate (206), a rotation platform (204) configured to carry a substrate (205) and bring the substrate to rotate; a guide unit conformal with the substrate, and configured to uniformly blow the gas supplied by the gas supply unit over a surface of the substrate on which the photoresist is coated; and a gas extraction unit (203) configured to extract gas from the device cavity (202). The present disclosure realizes uniformly and rapidly coating the photoresist on a large substrate.

Abstract: The embodiments of the present disclosure propose a negative refraction imaging lithographic method and equipment. The lithographic method includes: coating photoresist on a device substrate; fabricating a negative refraction imaging structure, wherein the negative refraction imaging structure exhibits optical negative refraction in response to beam emitted by exposure source; pressing a mask to be close to the negative refraction imaging structure; disposing the mask and the negative refraction imaging structure above the device substrate at a projection distance; and light emitted by the exposure source passes through the mask, the negative refraction imaging structure, the projection gap and is sequentially projected onto the photoresist for exposure.

Abstract: An apparatus and a method for detecting an optimal focal plane of a lithographic projection objective lens, the apparatus including: an illumination device, a beam splitting device, a lens array, a mask plate, a reflecting device, a photoelectric detector and a controller. The illumination device generates a collimated beam, which is transmitted through the beam splitting device, focused by the lens array to the mask plate for spatial-filtering, and delivered to the lithographic projection objective lens. The reflecting device reflects a focused beam passing through the lithographic projection objective lens to generate a reflected beam. The photoelectric detector detects an intensity of the reflected beam from the reflecting device after being spatial-filtered via the mask plate and generates a beam intensity signal. The controller controls a movement of a workpiece table and/or collects the beam intensity signal generated by the photoelectric detector.

Abstract: A flaw detecting apparatus and a method for a plane mirror based on line scanning and ring band stitching are provided. The flaw detecting apparatus comprises: a line scanning detector, an annular illumination source, a rotary table rotatable about a Z axis, a translation table translatable along an X axis and a processor. By translating and rotating the plane mirror to be detected, an entire surface of the plane mirror to be detected can be detected by the line scanning detector, and the flaw of the entire plane mirror to be detected is obtained by a ring band stitching method. The method of line scanning and ring band stitching reduces the imaging distortion, the intermediate data amount, the difficulty in the distortion correction and difficulty in stitching, and improves the detection speed and the detection quality.

Abstract: Embodiments of the present disclosure relate to a measuring method and device for measuring surface defects of a cambered optical element, which belongs to the field of photoelectric detection technology. The device includes a sensor measuring head, a rotatable workpiece table, an automatic sampling device, and a spraying device. The sensor measuring head includes an illumination sub-system and a line scan imaging sub-system, the illumination sub-system provides an illumination of high uniformity and high brightness for a surface of a sample to be detected, the rotatable workpiece table and the imaging sub-system are configured for performing a ring belt scanning and a high resolution scatter imaging to the defects on an optical surface region.

Abstract: The present disclosure provides a sub-wavelength structural material having compatibility of low detectability for infrared, laser, and microwave, which includes, from top to bottom, a metal type frequency selective surface layer I, a dielectric layer I, a metal type frequency selective surface layer II, a dielectric layer II, a resistive film, a dielectric layer III. Each of the metal type frequency selective surface layers is a sub-wavelength patch type array, and metal used by the metal type frequency selective surface layers has a characteristic of low infrared emissivity. The present disclosure modulates a phase by using a phase difference generated by patches with different sizes on the metal type frequency selective surface layer I, so as to control backscattering of incident electromagnetic waves to achieve compatibility of low detectability for laser and infrared, while the bottom three layers achieve absorption of microwave.

Abstract: A flaw detecting apparatus and a method for a plane mirror based on line scanning and ring band stitching are provided. The flaw detecting apparatus comprises: a line scanning detector, an annular illumination source, a rotary table rotatable about a Z axis, a translation table translatable along an X axis and a processor. By translating and rotating the plane mirror to be detected, an entire surface of the plane mirror to be detected can be detected by the line scanning detector, and the flaw of the entire plane mirror to be detected is obtained by a ring band stitching method. The method of line scanning and ring band stitching reduces the imaging distortion, the intermediate data amount, the difficulty in the distortion correction and difficulty in stitching, and improves the detection speed and the detection quality.