Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centers may be modulated.
Type:
Grant
Filed:
September 17, 2009
Date of Patent:
April 24, 2012
Assignee:
The Provost, Fellows and Scholars of the Colege of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin
Inventors:
John Boland, Stefano Sanvito, Borislav Naydenov