Patents Assigned to THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK SUNY POLYTECHNIC INSTITUTE
  • Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs
    Patent number: 10153201
    Abstract: A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: December 11, 2018
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC., THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK SUNY POLYTECHNIC INSTITUTE
    Inventors: Huiming Bu, Hui-feng Li, Vijay Narayanan, Hiroaki Niimi, Tenko Yamashita