Abstract: A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an internal state of the SRAM cell. In other implementations, the magnetoelectric and ferroelectric structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.

Abstract: This invention broadly comprises a novel segment protection scheme (survivability framework) for a network, which we refer to as PROMISE (Protection using MultIple SEgments). It combines the best of existing link and path protection schemes (e.g., bandwidth efficiency and fast recovery). The PROMISE approach divides an active path or AP (along which a survivable connection is established) into several, possibly overlapping active segments or ASs, and then protects each AS with a detour called backup segment or BS (instead of protecting the AP as a whole as in path protection schemes). This facilitates the bandwidth sharing not only among the BSs for different APs, but also among those for the same AP. In addition, recovery time can be shortened due to the limited length of each AS and BS. This technology can be applied to MPLS, ATM, SONET, WDM and other high-speed link layers under the evolving G-MPLS framework.

Abstract: Organopolysiloxane elastomers comprising copolymers of dimethyl and methylvinyl siloxanes provide improved facial and dental prosthetic materials, and are especially useful in preventing and treating chronic tissue irritation due to hard dental polymers. They are effectively bonded to polymeric and metallic substrates as denture liners, obturators, maxillofacial prosthetic devices and appliances with a group of trifunctional silane coupling agents.