Abstract: A semiconductor photovoltaic device comprises a semiconductor substrate having a first surface and a second surface, the first surface and the second surface being opposed to each other, a plurality of trenches extending into the semiconductor substrate from the first surface, the first surface being a substantially planar surface, a dopant region in the semiconductor substrate near the first surface and the plurality of trenches, a first conductive layer over the semiconductor substrate, and a second conductive layer on the second surface of the semiconductor substrate.

Abstract: A concentrated photovoltaic and thermal system is disclosed. The system compromises a photovoltaic receiver assembly that produces highly concentrated solar energy, resulting in efficient energy conversion that requires fewer photovoltaic receivers than an arrangement that lacks such high concentration levels. The receiver assembly comprises a primary optical element that concentrates the source light onto an electromagnetic energy receiver, a secondary optical element to aid in further concentration of the light source, a thermal energy converter and a heat dissipation unit. The photovoltaic receiver assembly is preferably mounted on a tracking system to maximize sun exposure.

Abstract: A method for increasing semiconductor device effective operation area, comprising following steps: depositing first conductive layer on the substrate; using laser for scribing a plurality of the first scribe lines on the first conductive layer, where the scribe lines are scribed on the bottom of the first conductive layer; depositing a plurality of the semiconductor material layers on the first conductive layer and in the plurality of the first scribe lines; using laser for scribing a plurality of the second scribe lines on the semiconductor material layer, where the scribe lines are scribed on the bottom of the semiconductor material layer, each second scribe line is comprised of a plurality of the second pores; depositing a second conductive layer on the semiconductor material layer and in the plurality of the first scribe lines and the plurality of the second scribe lines; using laser for scribing a plurality of the third scribe lines on the second conductive layer, where the scribe lines are scribed on th

Abstract: An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon.

Abstract: This invention relates to an electric cartridge heater and a method of operation, suitable for use in producing high purity silicon in solar cells or solar modules. The apparatus includes a single-piece elongated heater bar having a length, a first end, and a second end. The apparatus also includes a slot beginning at the first end and running a portion of the length, and the slot dividing the heater bar into a first arm and a second arm. An elbow at the second end joins the first arm and the second arm together. The apparatus also includes a first electrode in electrical communication with the first arm, and a second electrode in electrical communication with the second arm.

Abstract: An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon.

Abstract: A heat treatment method which can prevent heat deformation of a substrate caused during a heat treatment process on the substrate with a thin film formed on its surface is provided. The heat treatment method in accordance with the present invention includes (a) stacking a second substrate 10b on a first substrate 10a; and (b) stacking a weight 20 on the second substrate 10b, wherein the first substrate 10a and the second substrate 10b are stacked, with thin films 12 of the substrates 10a and 10b being in contact with each other. In accordance with the present invention, deformation of the substrate can be prevented by stacking the substrates, with thin films formed on the substrates being in contact with each other, and placing a weight on the stacked substrates during the heat treatment process.

Abstract: In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 ?cm. Therefore, conversion efficiency is enhanced when compared with conventional single-crystal silicon substrates. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

Abstract: Systems and methods are provided for monitoring a solid-liquid interface during a casting process. The systems and methods enable determination of the location of a solid-liquid interface during the casting process.

Abstract: This invention relates to a two or three-stage apparatus and method of use to produce high purity silicon, such as for use in solar panels and/or photovoltaics. The device of this invention includes a melting apparatus with a delivery device, a holding apparatus with a tipping or transfer mechanism, and at least one solidification apparatus for receiving a molten feedstock. The optimized designs of individual apparatuses function efficiently in combination to produce high purity silicon.

Abstract: A solar cell and a manufacturing method thereof are disclosed. The solar cell in accordance with the present invention includes a substrate 100; a lower electrode 111a formed on the substrate 100; a photoelectric element unit 200a including a polycrystalline photoelectric element 210 formed on the lower electrode 111a and formed by stacking a plurality of polycrystalline semiconductor layers 211a, 212a, and 213a, and a amorphous photoelectric element 220 formed on the polycrystalline photoelectric element 210 and formed by stacking a plurality of amorphous semiconductor layers 221, 222, and 223; and an upper electrode 400 formed on the photoelectric element unit 200a.

Abstract: A heat treatment method which can prevent heat deformation of a substrate caused during a heat treatment process on the substrate with a thin film formed on its surface is provided. The heat treatment method in accordance with the present invention includes (a) stacking a second substrate 10b on a first substrate 10a; and (b) stacking a weight 20 on the second substrate 10b, wherein the first substrate 10a and the second substrate 10b are stacked, with thin films 12 of the substrates 10a and 10b being in contact with each other. In accordance with the present invention, deformation of the substrate can be prevented by stacking the substrates, with thin films formed on the substrates being in contact with each other, and placing a weight on the stacked substrates during the heat treatment process.

Abstract: A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperature. The manufacturing method of a solar cell in accordance with the present invention includes the steps of (a) forming a first amorphous silicon layer on a substrate; (b) forming a second amorphous silicon layer on the first amorphous silicon layer; (c) forming a metal layer on the second amorphous silicon layer; (d) performing crystallization-annealing the second amorphous silicon layer; and (e) forming a third amorphous silicon layer on a resulting crystalline silicon layer of the step (d).

Abstract: A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperature. The manufacturing method of a solar cell in accordance with the present invention includes the steps of (a) forming a first amorphous silicon layer on a substrate; (b) forming a second amorphous silicon layer on the first amorphous silicon layer; (c) forming a metal layer on the second amorphous silicon layer; (d) performing crystallization-annealing the second amorphous silicon layer; and (e) forming a third amorphous silicon layer on a resulting crystalline silicon layer of the step (d).

Abstract: An automatic and electronic freeze protection system for solar energy collector systems. The system includes a solar collector for collecting solar energy in the form of heat, a circulation pump operated by a DC power source (typically a small photovoltaic module), a storage tank, an ac current connection to provide freeze protection at times when no sun is available, and various valves and piping to complete. Sensors are provided at both the storage tank and the solar collector to monitor the temperature of the water and also the temperature of the collector (more specifically, the temperature of the fluid in the collector). Whenever the fluid in the collector approaches its freeze point, the electronic freeze protection will use AC or battery power to energize the DC circulation pump, thereby circulating water from the storage tank to and through all components of the system.

Abstract: A polycrystalline silicon solar cell and its manufacturing method are disclosed. The polycrystalline silicon solar cell in according with the present invention is formed by crystallizing amorphous silicon, in which a metal catalyst is used to lower crystallization temperature. The solar cell in according with the present invention is characterized by comprising a plurality of polycrystalline silicon layers, wherein at least one of the plurality of polycrystalline silicon layers contains a metal component.

Abstract: There is provided a concentrating solar collector in the shape of an inverted truncated pyramid (collector) with light reflective surfaces on the inside. The collector includes a large top opening which is pointed towards the sun collecting the sun rays. A high-concentration photovoltaic solar cell is placed at the narrow end of the collector. The light is concentrated onto the solar cell, which generates electricity from the concentrated solar light. The collector is made of, but not limited to, an inflatable lightweight reflective film, balloon filled with helium, glass, plastic or metal. The reflective surface inside the collector is obtained using inexpensive mirror coating which is applied to clear glass or plastic. A cooling system is used for keeping the concentrated photovoltaic solar cell at or close to a fixed temperature to maintain the cell at its highest operating efficiency of power generation.

Abstract: A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

Abstract: The present invention includes a method for casting a silicon ingot by using a continuous casting method by means of an electromagnetic induction, and a method for cutting the silicon ingot as a starting material into plural silicon blocks. When the silicon blocks with a square section are cut out, the sectional shape of the silicon ingot is set to be rectangular. Not less than 6 pieces of equal-sized silicon blocks are cut out from the silicon ingot, thereby enabling to enhance the manufacturing efficiency to a great extent. And since the amount of excision of the edge per silicon block is reduced, the production yield can be enhanced. Further, since the proportion of columnar crystals with large grain size inside the ingot can be increased, it becomes possible to enhance the conversion efficiency of a solar battery using the silicon block as a substrate material.

Abstract: In melting and casting by a water-cooled crucible induction melting technique, a partition means is inserted on top portion of a melt, and a new raw material for is charged on an upper side of the partition means to continue the melting and casting. Therefore, the continuous casting can be kept while avoiding mixture of the melt on a lower side of with the melt on an upper side of the partition means. A partition plate or a partition plate with legs can be used as the partition means. When the present invention is applied to production of a silicon ingot used for a solar cell and the like, productivity is largely improved, which allows costs to be remarkably reduced in solar energy generation. Therefore, the present invention can widely be utilized as the method for casting a polycrystalline-silicon ingot for a solar cell.