Abstract: Non-volatile resistance-switching oxide films, and devices therewith, are disclosed. One embodiment of a suitable device is composed of a SRO-CZO thin film having a thickness of from about 6 to about 30 nm, and composed of from about 3 to about 10 molar % of a SrRuO3 conducting oxide dopant and from about 90 to about 97 molar % of a CaZrO3 insulating oxide material.
Type:
Application
Filed:
April 26, 2007
Publication date:
November 22, 2007
Applicant:
The Trustees of the University of Pennyslvani