Patents Assigned to The United States of America as repeated by the Administrator of the National Aeronautics and Space Administration
  • Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors
    Patent number: 5304538
    Abstract: Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO.sub.3, CaVO.sub.3, and SrVO.sub.3 are grown on electron-type high temperature superconductors such as Nd.sub.1.85 Ce.sub.0.15 CuO.sub.4-x. Alternatively, transition metal bronzes of the form A.sub.x MO.sub.3 are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO.sub.3 are grown on either hole-type or electron-type high temperature superconductors.
    Type: Grant
    Filed: March 11, 1992
    Date of Patent: April 19, 1994
    Assignee: The United States of America as repeated by the Administrator of the National Aeronautics and Space Administration
    Inventors: Richard P. Vasquez, Brian D. Hunt, Marc C. Foote