Abstract: The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circuit is particularly will suited for the readily available CMOS and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) processes prevalent today.
Type:
Grant
Filed:
October 7, 2004
Date of Patent:
June 13, 2006
Assignee:
The United States of America as represented by the Dept of the Army