Abstract: A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV<E.sub.g <0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers.
Type:
Grant
Filed:
August 29, 1996
Date of Patent:
June 23, 1998
Assignee:
The United States of America as reprresented by the United States Department of Energy
Inventors:
Greg W. Charache, Paul F. Baldasaro, Greg J. Nichols