Abstract: A thermal interface assembly and method for forming a thermal interface between a microelectronic component package and a heat sink having a total thermal resistance of no greater than about 0.03° C.-in2/W comprising interposing a thermal interface assembly between an microelectronic component package and heat sink with the thermal interface assembly comprising a thermal interface material having phase change properties and a sealing member selected from the group consisting of an o-ring and/or shim in an arrangement such that the thermal interface material is shielded from the atmosphere when the microelectronic component package is operational.

Abstract: The thermal interface structure of the present invention is suited for use in a non-referenced die system between a heat source and heat sink spaced up to 300 mils apart and comprises a plurality of layers including a core body of high conductivity metal or metal alloy having opposite sides, a soft thermal interface layer disposed on one side of the core body for mounting against the heat sink and a thin layer of a phase change material disposed on the opposite side of the core body for mounting against the heat source wherein the surface area dimension (footprint) of the core body is substantially larger than the surface area of the heat source upon which the phase change material is mounted to minimize the thermal resistance between the heat source and the heat sink and wherein said soft thermal interface layer is of a thickness sufficient to accommodate a variable spacing between the heat source and the heat sink of up to 300 mils.

Abstract: The thermal interface structure of the present invention is suited for use in a non-referenced die system between a heat source and heat sink spaced up to 300 mils apart and comprises a plurality of layers including a core body of high conductivity metal or metal alloy having opposite sides, a soft thermal interface layer disposed on one side of the core body for mounting against the heat sink and a thin layer of a phase change material disposed on the opposite side of the core body for mounting against the heat source wherein the surface area dimension (footprint) of the core body is substantially larger than the surface area of the heat source upon which the phase change material is mounted to minimize the thermal resistance between the heat source and the heat sink and wherein said soft thermal interface layer is of a thickness sufficient to accommodate a variable spacing between the heat source and the heat sink of up to 300 mils.

Abstract: A heat sink and heat spreader assembly including a solid member of a conductive material and a layer of a low melting alloy having phase change properties bonded to at least one surface of the solid member such that a welded joint is formed there between possessing a thickness of from 0.0001 to 0.020 inches and having a composition consisting essentially of said low melting alloy with the welded joint having an exposed relatively flat surface suitable for direct attachment to an electronic heat source or heat sink respectively.

Abstract: A multi-layer solid structure and method for forming a thermal interface between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W at a pressure of less than 100 psi. The structure comprises at least two metallic layers each of high thermal conductivity with one of the two layers having phase change properties for establishing low thermal resistance at the interface junction between the microelectronic component package and the heat sink.

Abstract: A multi-layer solid structure and method for forming a thermal interface between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W at a pressure of less than 100 psi. The structure comprises at least two metallic layers each of high thermal conductivity with one of the two layers having phase change properties for establishing low thermal resistance at the interface junction between the microelectronic component package and the heat sink.

Abstract: A multi-layer thermal interface structure for placement between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W. The structure comprises a plurality of superimposed metallic layers including a core layer of a solid metal or metal alloy of high thermal conductivity preferably composed of aluminum or copper, a second layer having phase change properties and a third layer of nickel separating the solid metal layer from the layer having phase change properties.

Abstract: A multi-layer solid structure and method for forming a thermal interface between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W at a pressure of less than 100 psi. The structure comprises at least two metallic layers each of high thermal conductivity with one of the two layers having phase change properties for establishing low thermal resistance at the interface junction between the microelectronic component package and the heat sink.

Abstract: A multi-layer solid structure and method for forming a thermal interface between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W at a pressure of less than 100 psi. The structure comprises at least two metallic layers each of high thermal conductivity with one of the two layers having phase change properties for establishing low thermal resistance at the interface junction between the microelectronic component package and the heat sink.

Abstract: A multi-layer solid structure and method for forming a thermal interface between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W at a pressure of less than 100 psi. The structure comprises at least two metallic layers each of high thermal conductivity with one of the two layers having phase change properties for establishing low thermal resistance at the interface junction between the microelectronic component package and the heat sink.