Abstract: A process for creating low defectivity epitaxial layers on a SiC substrate. A plurality of pillars are formed in the SiC substrate. A first SiC epitaxial layer is formed using epitaxial lateral overgrowth. The first SiC epitaxial layer comprises the pillars formed in the SiC substrate and the epitaxial lateral overgrowth. A second SiC epitaxial layer is formed overlying the first epitaxial layer. The second SiC epitaxial layer is formed using epitaxial vertical overgrowth. The SiC substrate, the first SiC epitaxial layer, and the second SiC epitaxial layer are single crystal. Defect propagation in growing the second SiC epitaxial layer is minimized by decreasing a top surface area of the plurality of pillars in relation to a surface area of the epitaxial lateral overgrowth.

Abstract: A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.

Abstract: A reusable silicon carbide or gallium nitride substrate is disclosed. A merge layer is formed in or on the substrate. Trenches are formed in the substrate. A trench pattern is configured to create a plurality of pillars in the substrate. The spacing between pillars is configured to support the formation of an epitaxial layer between the pillars grown by epitaxial lateral overgrowth. A surface of the merge layer comprises the epitaxial layer and a top surface of each pillar of the plurality of pillars. One or more epitaxial layers are grown by epitaxial vertical overgrowth overlying the merge layer. A plurality of devices are formed in the one or more epitaxial layers. The plurality of devices is separated from the substrate where the exfoliation occurs below the surface of the merge layer. A portion of the merge layer is coupled to the plurality of devices after exfoliation.

Abstract: A batch mode SiC (Silicon Carbide) epitaxial reactor comprising an inlet gas manifold, an inlet heat exchanger coupled to the inlet gas manifold, a plurality of removable vertical susceptors configured to couple to the inlet heat exchanger, a plurality of exhaust heat exchangers coupled to the plurality of removable vertical susceptors, and a scrubber coupled to the plurality of exhaust heat exchangers. Each removable vertical susceptor is configured to hold at least two SiC wafers tilted in a vertical fixed position relative to a flow of heated gases output by the inlet heat exchanger. The plurality of exhaust heat exchangers are configured to heat hydrogen gas. The heated hydrogen gas is configured to couple to the inlet heat exchanger to heat gases provided through the inlet gas manifold to grow SiC on the plurality of SiC wafers in the plurality of removable vertical susceptors thereby reducing energy consumption.

Abstract: A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer.

Abstract: A susceptor configured to hold one or more WBG (Wide Bandgap) semiconductor wafers for epitaxial layer growth to support a manufacture of at least one WBG semiconductor device. A susceptor is removed from an epitaxial reactor when a predetermined thickness of polycrystalline WBG semiconductor material builds up from growing epitaxial layers on one or more WBG semiconductor wafers. The susceptor is scanned by a laser such that the energy from the laser is absorbed by the one or more layers of polycrystalline WBG semiconductor material to decompose the one or more layers of polycrystalline WBG semiconductor material into two or more constituent components. The two or more constituent components are then removed from the susceptor by etching to produce a cleaned susceptor. The cleaned susceptor can then be placed in an epitaxial reactor to grow epitaxial wafers on WBG semiconductor wafers.

Abstract: A trench field effect transistor comprising a substrate. An epitaxial buffer layer is formed overlying the substrate. An epitaxial device layer is formed overlying the epitaxial buffer layer. A device body layer is formed overlying the epitaxial device layer. The substrate, epitaxial buffer layer, epitaxial device layer, and device body layer comprise silicon carbide. A trench formed in the device body layer into at least a portion of the epitaxial body layer. An insulating layer formed on the walls of the trench. A bottom of the trench is etched isotropically and forms a curved surface. The trench bottom after the isotropic etch extends past the walls of the trench and couples to the trench walls in a curve. An oxide layer is formed overlying the trench bottom and has a corresponding curve similar to the trench bottom. A gate oxide is formed on at least one wall of the trench.

Abstract: A semiconductor substrate is configured for dicing into separate die or individual semiconductor devices. The semiconductor substrate can comprise silicon, silicon carbide, or gallium nitride. A dicing grid bounds each semiconductor device on the semiconductor substrate. A die singulation process is configured to occur in the dicing grid. Material is coupled to the dicing grid. In one embodiment, the material can comprise carbon. A laser is configured to couple energy to the material coupled to the dicing grid. The energy from the laser heats the material. The heat from the material or the temperature differential between the material and the dicing creates a thermal shock that generates a vertical fracture in the semiconductor substrate that separates the semiconductor device from the remaining semiconductor substrate.

Abstract: A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer.

Abstract: A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.

Abstract: A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.

Abstract: A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer.