Abstract: A photovoltaic module that converts incident light received through a light transmissive cover sheet into a voltage is provided. The photovoltaic module includes a substrate, conductive upper and lower layers between the substrate and the cover sheet, and a semiconductor layer stack between the conductive upper and lower layers. The conductive lower layer includes an electrode diffusion layer between a lower electrode and a conductive light transmissive layer. The electrode diffusion layer restricts diffusion of the lower electrode of the conductive lower layer into the conductive light transmissive layer during deposition of the semiconductor layer stack. The incident light is converted by the semiconductor layer stack into the voltage potential between the conductive upper and lower layers.
Abstract: A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline fraction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.
Type:
Application
Filed:
April 8, 2011
Publication date:
August 4, 2011
Applicant:
THINSILICON CORPORATION
Inventors:
Jason M. Stephens, Kevin Michael Coakley, Guleid Hussen
Abstract: A photovoltaic device includes: a substrate; lower and upper electrode layers disposed above the substrate; and a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing incident light to excite electrons from the semiconductor layer, wherein the semiconductor layer includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers, the bypass diode permitting electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.
Type:
Application
Filed:
December 8, 2010
Publication date:
May 19, 2011
Applicant:
THINSILICON CORPORATION
Inventors:
Kevin Coakley, Guleid Hussen, Jason Stephens
Abstract: A system for recycling includes a processing chamber, a reclamation reservoir and a mixing reservoir. The processing chamber is configured to receive a deposition gas deposited onto a semiconductor layer. The processing chamber has an exhaust to discharge an unused portion of the deposition gas as an effluent gas. The reclamation reservoir is in fluid communication with the processing chamber. The reclamation reservoir is configured to receive and store the effluent gas from the processing chamber. The mixing reservoir is in fluid communication with the reclamation reservoir and the processing chamber. The mixing reservoir is configured to mix the effluent gas with a virgin gas to form a recycled deposition gas. The mixing reservoir supplies the recycled deposition gas to the processing chamber to deposit an additional portion of the semiconductor layer.
Type:
Application
Filed:
December 10, 2009
Publication date:
June 10, 2010
Applicant:
THINSILICON CORPORATION
Inventors:
JASON MICHAEL STEPHENS, BRADLEY OWEN STIMSON, GULEID NUR ABDI HUSSEN
Abstract: A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline traction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.
Type:
Application
Filed:
May 27, 2008
Publication date:
December 4, 2008
Applicant:
THINSILICON CORPORATION
Inventors:
JASON M. STEPHENS, KEVIN MICHAEL COAKLEY, GULEID HUSSEN