Abstract: Disclosed are the method and system to derive the wavelength/frequency information covering wide wavelength or frequency range. Its practical applications include both fixed wavelength optical signal and wide bandwidth tunable or non-tunable optical signal, where the wavelength/frequency information is necessary for optical signal calibration, control, and monitoring, optical communications, and data processing. The approach has a “self-compensation” feature which is preferred to improve the accuracy of the extracted wavelength or frequency information even though there are components in the system having strong wavelength or frequency dependence in the wide wavelength or frequency range. The method is generic which can be realized in free space, fiber, or photonic integrated circuit (PIC).

Abstract: Multi-surface emitting mid-IR multiwavelength distributed-feedback quantum cascade ring lasers laid out in a concentric circle are disclosed. The lasers utilize quantum cascade core designs to produce optical gain in the mid-infrared region and may generate several wavelengths simultaneously or sequentially. Methods of making along with methods of using such devices are also disclosed.

Abstract: Disclosed is a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 ?m. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 ?m and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.

Abstract: Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed.

Abstract: A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated laser sections extending along a waveguide axis of the laser. An active waveguide core is sandwiched between upper and lower n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser.

Abstract: A method of characterizing a monolithic tunable mid-infrared laser including a heterogeneous quantum cascade active region together with a least first and a second tunable integrated distributed feedback gratings, the method including operating the laser while tuning the first grating through its full tuning range, while holding the reflectivity function of the second grating constant, then operating the laser while tuning the second grating through its full tuning range, while holding the reflectivity function of the first grating constant.

Abstract: Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 ?m. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 ?m and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.

Abstract: Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.

Abstract: Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed.

Abstract: Included are embodiments of a quantum cascade laser structure. Some embodiments include a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region. In some embodiments, a photon is emitted in the active region when an electron transitions from an upper laser state in the active region to a lower laser state in the active region. Additionally, a final quantum well in the plurality of quantum wells may define the active region, where the final quantum well extends below an adjacent quantum well in the active region. Similarly, the final quantum well may include a thickness that is less than a thickness of the adjacent quantum well in the active region.

Abstract: Concatenated distributed feedback lasers having multiple laser sections laid out in series are disclosed. The concatenated distributed feedback lasers utilize quantum cascade core designs to produce optical gain in the mid-infrared region and may generate several wavelengths simultaneously or sequentially. Methods of making along with methods of using such devices are also disclosed.

Abstract: A monolithic tunable mid-infrared laser has a wavelength range within the range of 3-14 ?m and comprises a heterogeneous quantum cascade active region together with at least a first integrated grating. The heterogeneous quantum cascade active region comprises at least one stack, the stack comprising two, desirably at least three differing stages. Methods of operating and calibrating the laser are also disclosed.

Abstract: Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.

Abstract: A multi-wavelength distributed Bragg reflector (DBR) semiconductor laser is provided where DBR heating elements are positioned over the waveguide in the DBR section and define an interleaved temperature profile that generates multiple distinct reflection peaks corresponding to distinct temperature dependent Bragg wavelengths associated with the temperature profile. Neighboring pairs of heating elements of the DBR heating elements positioned over the waveguide in the DBR section are spaced along the direction of the axis of optical propagation by a distance that is equal to or greater than the laser chip thickness b to minimize the impact of thermal crosstalk between distinct temperature regions of the interleaved temperature profile.

Abstract: A method and system for generating an optical frequency comb that employs a dual parallel modulator that inputs an optical signal at a center frequency of a desired optical frequency comb and an RF signal at a frequency corresponding to a desired spacing of the teeth of the optical frequency comb. The amplitudes of the teeth of the optical frequency comb are controlled by controlling the amplitudes of the two RF inputs to the DPM and the phase shift between the two RF inputs. In some embodiments, the three bias voltages for the three interferometers in the DPM are also controlled. In some embodiments, all three interferometers are all biased at the same point (e.g., quadrature). Preferably, but not necessarily, the three interferometers of the DPM are formed on a single substrate.

Abstract: A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

Abstract: A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.