Abstract: An electronic circuit carries out communication by inductive coupling between chips which are stacked and mounted. The electronic circuit relays an inter-chip communication signal by a repeater which receives a signal from a transmitter to recognize a transmission source and a receiving destination, and relays a received signal when the repeater itself exists between the transmission source and the receiving destination, and does not relay the received signal when the repeater itself does not exist between the transmission source and the receiving destination. Accordingly, data can be transferred at high speed up to a chip farther than the dimensions of a coil through communications by inductive coupling between the stacked and mounted chips.

Abstract: The invention relates to a multilayer semiconductor integrated circuit device which is provided with a smaller space for a three-dimensional multilayer configuration at a lower cost and with a sufficient power supply quality. A first semiconductor integrated circuit device is provided with a first penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the first power supply potential, and a second penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the second power supply potential. A second semiconductor integrated circuit device having a first electrode and a second electrode is layered on top of the first semiconductor integrated circuit device so that the first electrode and the second electrode are respectively connected to the first penetrating semiconductor region and the second penetrating semiconductor region.

Abstract: An integrated circuit includes multiple quadrangular coils including a first wiring and a second wiring that are alternately connected to each other and formed on different layers in a manner perpendicularly intersecting each other. The coils are partly overlapped with each other in a diagonal direction that connects opposite corners of the coils. The coils preferably have the same structures. A target coil among the coils preferably partly overlaps with another coil among the coils in two diagonal directions that connect opposite corners of the target coil.

Abstract: The invention relates to a multilayer semiconductor integrated circuit device which is provided with a smaller space for a three-dimensional multilayer configuration at a lower cost and with a sufficient power supply quality. A first semiconductor integrated circuit device is provided with a first penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the first power supply potential, and a second penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the second power supply potential. A second semiconductor integrated circuit device having a first electrode and a second electrode is layered on top of the first semiconductor integrated circuit device so that the first electrode and the second electrode are respectively connected to the first penetrating semiconductor region and the second penetrating semiconductor region.