Patents Assigned to Tinggi Technologies Private Limited
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Patent number: 8426292Abstract: A method of fabricating semiconductor devices is disclosed. The method comprises providing a wafer comprising a substrate with a plurality of epitaxial layers mounted on the substrate. Patterns are formed above the plurality of epitaxial layers remote from the substrate. A second substrate of a conductive metal is formed on the plurality of epitaxial layers remote from the substrate and between the patterns. The second substrate, the plurality of epitaxial layers and the substrate are at least partially encapsulated with a soft buffer material. The substrate is separated from the plurality of epitaxial layers at the wafer level and while the plurality of epitaxial layers are intact while preserving electrical and mechanical properties of the plurality of epitaxial layers by applying a laser beam through the substrate to an interface of the substrate and the plurality of epitaxial layers, the laser beam having well defined edges.Type: GrantFiled: December 1, 2008Date of Patent: April 23, 2013Assignee: Tinggi Technologies Private LimitedInventors: Shu Yuan, Xuejun Kang
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Patent number: 8395167Abstract: A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed.Type: GrantFiled: August 16, 2007Date of Patent: March 12, 2013Assignee: Tinggi Technologies Private LimitedInventors: Xuejun Kang, Zhen Chen, Tien Khee Ng, Jenny Lam, Shu Yuan
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Patent number: 8329556Abstract: A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer.Type: GrantFiled: December 19, 2006Date of Patent: December 11, 2012Assignee: Tinggi Technologies Private LimitedInventors: Shu Yuan, Jing Lin
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Patent number: 8309377Abstract: Fabrication of Reflective Layer on Semiconductor Light emitting diodes A method for fabrication of a reflective layer on a semiconductor light emitting diode, the semiconductor light emitting diode having a wafer with multiple epitaxial layers on a substrate; the method comprising applying a first ohmic contact layer on a front surface of the multiple epitaxial layers, the first ohmic contact layer being of a reflective material to also act as a reflective layer.Type: GrantFiled: March 1, 2005Date of Patent: November 13, 2012Assignee: Tinggi Technologies Private LimitedInventors: Shu Yuan, Xuejun Kang
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Patent number: 8124994Abstract: A light emitting device is disclosed that has a plurality of epitaxial layers including an active layer, at least one of a reflective layer and an ohmic contact on a first side of the epitaxial layers; and a layer of a conductive metal on a second side of the epitaxial layers and having a light emitting surface. A terminal is on the light emitting surface, the terminal comprising an array for diffusing electrical current and minimizing its effect on light output. The array may have a bonding pad, an outer portion, and a joining portion connecting the bonding pad and the outer portion; the outer portion and the joining portion being for current dissipation.Type: GrantFiled: September 4, 2007Date of Patent: February 28, 2012Assignee: Tinggi Technologies Private LimitedInventors: Shu Yuan, Shiming Lin
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Patent number: 8034643Abstract: A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer;(b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.Type: GrantFiled: September 19, 2003Date of Patent: October 11, 2011Assignee: Tinggi Technologies Private LimitedInventors: Xuejun Kang, Daike Wu, Edward Robert Perry, Shu Yuan
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Patent number: 8004001Abstract: A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.Type: GrantFiled: September 1, 2006Date of Patent: August 23, 2011Assignee: Tinggi Technologies Private LimitedInventors: Shu Yuan, Xuejun Kang, Daike Wu
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Publication number: 20100255656Abstract: A method of fabricating semiconductor devices is disclosed. The method comprises providing a wafer comprising a substrate with a plurality of epitaxial layers mounted on the substrate. Patterns are formed above the plurality of epitaxial layers remote from the substrate. A second substrate of a conductive metal is formed on the plurality of epitaxial layers remote from the substrate and between the patterns. The second substrate, the plurality of epitaxial layers and the substrate are at least partially encapsulated with a soft buffer material. The substrate is separated from the plurality of epitaxial layers at the wafer level and while the plurality of epitaxial layers are intact while preserving electrical and mechanical properties of the plurality of epitaxial layers by applying a laser beam through the substrate to an interface of the substrate and the plurality of epitaxial layers, the laser beam having well defined edges.Type: ApplicationFiled: December 1, 2008Publication date: October 7, 2010Applicant: TINGGI TECHNOLOGIES PRIVATE LIMITEDInventors: Shu Yuan, Xuejun Kang
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Publication number: 20100047996Abstract: A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer.Type: ApplicationFiled: December 19, 2006Publication date: February 25, 2010Applicant: Tinggi Technologies Private LimitedInventors: Shu Yuan, Jing Lin
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Publication number: 20080224173Abstract: A method for fabricating transistors such as high electron mobility transistors, each transistor comprising a plurality of epitaxial layers on a common substrate, method comprising: (a) forming a plurality of source contacts on a first surface of the plurality of epitaxial layers; (b) forming at least one drain contact on the first surface; (c) forming at least one gate contact on the first surface; (d) forming at least one insulating layer over and between the gate contacts, source contacts and the drain contacts; (e) forming a conductive layer over at least a part of the at least one insulating layer for connecting the source contacts; and (f) forming at least one heat sink layer over the conductive layer.Type: ApplicationFiled: September 1, 2006Publication date: September 18, 2008Applicant: Tinggi Technologies Private LimitedInventors: Shu Yuan, Xue Jun Kang, Shi Ming Lin
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Publication number: 20080210970Abstract: A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode.Type: ApplicationFiled: September 19, 2003Publication date: September 4, 2008Applicant: TINGGI TECHNOLOGIES PRIVATE LIMITEDInventors: Xuejun Kang, Daike Wu, Edward Robert Perry, Shu Yuan
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Publication number: 20080210969Abstract: A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.Type: ApplicationFiled: September 1, 2006Publication date: September 4, 2008Applicant: Tinggi Technologies Private LimitedInventors: Shu Yuan, Xue Jun Kang, Da Ke Wu