Patents Assigned to Tinggi Technologies Pte Limited
  • Patent number: 7763477
    Abstract: A method for fabrication of a semiconductor device, the semiconductor device having a plurality of epitaxial layers on a substrate. The plurality of epitaxial layers include an active region in which light is able to be generated. The method comprises applying at least one first ohmic contact layer to a front surface of the epitaxial layer, the first ohmic contact layer also acting as a reflector. The substrate is then remove from a rear surface of the epitaxial layers. The rear surface is then textured.
    Type: Grant
    Filed: March 1, 2005
    Date of Patent: July 27, 2010
    Assignee: Tinggi Technologies Pte Limited
    Inventors: Shu Yuan, Xuejun Kang