Abstract: A lens barrel capable of increasing the moving range of a lens includes: a lens retainer frame for holding a lens; a drive unit for driving the lens retainer frame along the optical axis direction; a first cylinder that holds the drive unit and has a cam follower; a second cylinder that has a cam groove for engaging the cam follower; and a bias part for biasing the first cylinder along the optical axis.

Abstract: A measuring equipment utilizing terahertz pulse light, includes: a terahertz light generator that generates terahertz pulse light; a terahertz light detector that detects terahertz pulse light; a first condensing optical system that condenses the terahertz pulse light generated by the terahertz light generator; and a second condensing optical system that condenses the terahertz pulse light diverging after being condensed by the first condensing optical system, onto the terahertz light detector. A sample is arranged in a vicinity of a position of condensing the terahertz pulse light by the first condensing optical system; and at least one of the first and the second condensing optical systems includes at least one optical device having a positive or negative refractive power.

Abstract: A measuring equipment utilizing terahertz pulse light, includes: a terahertz light generator that generates terahertz pulse light; a terahertz light detector that detects terahertz pulse light; a first condensing optical system that condenses the terahertz pulse light generated by the terahertz light generator; and a second condensing optical system that condenses the terahertz pulse light diverging after being condensed by the first condensing optical system, onto the terahertz light detector. A sample is arranged in a vicinity of a position of condensing the terahertz pulse light by the first condensing optical system; and at least one of the first and the second condensing optical systems includes at least one optical device having a positive or negative refractive power.

Abstract: A semiconductor impurity concentration testing apparatus includes a terahertz pulse light source that irradiates terahertz pulse light on a semiconductor material, a light detector that detects transmitted pulse light having been transmitted through the semiconductor material, a measurement device that ascertains a spectral transmittance based upon a time-series waveform of the electric field intensity of the transmitted pulse light and an arithmetic operation unit that calculates an impurity concentration in the semiconductor material based upon the spectral transmittance. By adopting such a structure, it becomes possible to measure and test the impurity concentration over the entire semiconductor material in a simple manner and to reproduce an image of the impurity distribution.

Abstract: A semiconductor impurity concentration testing apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light on a semiconductor material, a light detector that detects transmitted pulse light having been transmitted through the semiconductor material, a measurement device that ascertains a spectral transmittance based upon a time-series waveform of the electric field intensity of the transmitted pulse light and an arithmetic operation unit that calculates an impurity concentration in the semiconductor material based upon the spectral transmittance. By adopting such a structure, it becomes possible to measure and test the impurity concentration over the entire semiconductor material in a simple manner and to reproduce an image of the impurity distribution.

Abstract: An electrical characteristics evaluation apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light onto a semiconductor material, a light detector that detects pulse light having been transmitted through or having been reflected by the semiconductor material, a measurement device that obtains a spectral transmittance or a spectral reflectance by using a time-series waveform of the electric field intensity of the transmitted pulse light or the reflected pulse light and an arithmetic operation unit that calculates an electrical characteristics parameter of the semiconductor material based upon the spectral transmittance or the spectral reflectance. By adopting this electrical characteristics evaluation apparatus and the corresponding electrical characteristics evaluation method, the electrical material quantities (such as the carrier density, the mobility, the resistivity and the electrical conductivity) of the measurement target, i.e.