Patents Assigned to TODOS TECHNOLOGIES LTD.
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Patent number: 11609217Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.Type: GrantFiled: September 4, 2020Date of Patent: March 21, 2023Assignees: Todos Technologies Ltd., TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.Inventors: Yael Nemirovsky, Amikam Nemirovsky, Shmuel Melman
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Patent number: 11585773Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.Type: GrantFiled: September 24, 2019Date of Patent: February 21, 2023Assignees: TODOS TECHNOLOGIES LTD., TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTDInventor: Yael Nemirovsky
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Patent number: 11079318Abstract: There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral hand; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.Type: GrantFiled: March 9, 2017Date of Patent: August 3, 2021Assignees: TODOS TECHNOLOGIES LTD., TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.Inventors: Yael Nemirovsky, Amikam Nemirovsky
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Publication number: 20200400633Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.Type: ApplicationFiled: September 4, 2020Publication date: December 24, 2020Applicants: TODOS TECHNOLOGIES LTD., Technion Research and Delelopment Foundation Ltd.Inventors: Yael Nemirovsky, Amikam Nemirovsky, Shmuel Melman
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Patent number: 10811556Abstract: A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.Type: GrantFiled: December 25, 2018Date of Patent: October 20, 2020Assignees: TODOS TECHNOLOGIES LTD., TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTD.Inventors: Yael Nemirovsky, Amikam Nemirovsky
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Patent number: 10768153Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.Type: GrantFiled: August 1, 2016Date of Patent: September 8, 2020Assignees: TODOS TECHNOLOGIES LTD., TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.Inventors: Yael Nemirovsky, Amikam Nemirovsky, Shmuel Melman
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Patent number: 10627293Abstract: A sensing device includes a pair of infrared sensors comprising respective temperature-sensitive transistors, which are configured to generate respective output signals in response to incident thermal radiation, and which are coupled together in a differential circuit topology that includes at least one differential amplifier that follows the temperature-sensitive transistors, so as to amplify a difference between the respective output signals.Type: GrantFiled: May 7, 2015Date of Patent: April 21, 2020Assignee: Todos Technologies Ltd.Inventor: Yoav Shoham
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Patent number: 10598557Abstract: A pressure sensing device that includes a pressure sensing element that is of microscopic scale and has a pressure level dependent thermal parameter; a signal source that is configured to supply an input electrical signal to the pressure sensing element; and a monitor that is configured to (a) measure electrical output signals generated by the pressure sensing element as a result of the supply of the input electrical signal and (b) estimate a pressure level applied on the pressure sensing element based on the electrical output signals.Type: GrantFiled: July 12, 2016Date of Patent: March 24, 2020Assignee: Todos Technologies Ltd.Inventor: Yael Nemirovsky
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Publication number: 20190011415Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.Type: ApplicationFiled: August 1, 2016Publication date: January 10, 2019Applicants: TODOS TECHNOLOGIES LTD., TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTD., TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTD.Inventors: Yael Nemirovsky, Amikam NEMIROVSKY, Shmuel Melman
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Publication number: 20180202865Abstract: A sensing device (20) includes a pair of infrared sensors comprising respective temperature-sensitive transistors (32, 34), which are configured to generate respective output signals in response to incident thermal radiation, and which are coupled together in a differential circuit topology so as to amplify a difference between the respective output signals.Type: ApplicationFiled: May 7, 2015Publication date: July 19, 2018Applicant: TODOS TECHNOLOGIES LTD.Inventor: YOAV SHOHAM
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Patent number: 9733128Abstract: A sensing device includes an array of sensing elements. Each sensing element includes a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor. An individual reflector is formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation.Type: GrantFiled: May 31, 2015Date of Patent: August 15, 2017Assignee: TODOS TECHNOLOGIES LTD.Inventors: Yael Nemirovsky, Yoav Shoham