Abstract: A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

Abstract: A method for planarizing a workpiece includes bringing a surface of the workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other, rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad, and simultaneously reciprocally moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.

Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.

Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.

Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.