Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminium oxide) and at least one additive selected from a group consisting of oxides of gallium, titanium, scandium, and others. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.

Abstract: A stabilized DC power supply device providing a plurality of different stabilized DC powers with regulated voltage levels. Stabilized DC powers with rated currents of 2A. or less are taken out from transistor series regulator circuits, another stabilized power with rated current of 8-10A. or more is output from a magnetic amplifier regulator circuit and other powers with rated current of 8-10A. or less are obtained from transistor switching regulator circuits. The regulated voltage output from one of the switching regulator circuits is used as an input DC power for the series regulator circuits and is fed to them through an DC-AC inverter circuit and respective rectifier circuits. Input powers to both the switching regulator circuits and the magnetic amplifier regulator circuit are from a DC power source through a single DC-AC inverter circuit. The device is small in size and good in efficiency.

Abstract: Samarium cobalt magnetic materials for permanent magnets comprising, by atomic ratio relative to the samarium content, samarium of 1, cobalt of 4.0-5.2 and at least one addition selected from silicon up to 5.8 wt.% or 0.82 by atomic ratio to the samarium, germanium up to 8.5 wt.% or 0.57 by atomic ratio to the samarium and aluminum up to 4.75 wt.% or 0.82 by atomic ratio to the samarium, and having increased intrinsic coercive force and decreased irreversible magnetic induction loss with temperature. In the case wherein the total amount of the aforesaid addition or additions is limited, by atomic ratio to the samarium, to up to 0.25, the samarium cobalt magnetic materials may provide sintered permanent magnets having a reduced irreversible magnetic induction loss with temperature, without decreased residual magnetic flux density. When the total amount of the aforesaid addition is restricted, by atomic ratio to samarium, to up to 0.