Abstract: An input device includes an operation portion configured to receive an input operation made by a user, a vibration portion configured to vibrate the operation portion, a detection portion configured to detect the input operation, and a controller configured to determine a vibration condition of the vibration portion based on the input operation detected by the detection portion and present an elastic sense to the user by driving the vibration portion under the determined vibration condition.

Abstract: [Problem] The purpose of the present invention is to provide a bispecific antibody that is structurally stable, and can show alone a sufficient effect without the co-administration of activated lymphocyte (T-LAK). [Solution] The present invention is therefore related to a humanized highly functional bispecific antibody comprising humanized variable regions of the heavy chain (5H) and the light chain (5L) of an anti-human EGF receptor 1 antibody 528, and humanized variable regions of the heavy chain (OH) and the light chain (OL) of an anti-CD3 antibody OKT3; and having one of the following structures (i)-(vi) in Claim 1, wherein the 5H, 5L, OH and OL have an amino acid sequence represented by SEQ ID Nos 25, 26, 27 and 28, respectively.

Abstract: The present invention relates to a method for obtaining cells or cell populations having a high biological activity from a biological tissue by enzymatic isolation, and probes for use in the method; more specifically to a method for analyzing a biological tissue, comprising applying two or more probes respectively containing biological-component binding domains through which two or more proteins bind to a predetermined biological component, to an isolated biological tissue, and analyzing binding amounts of the probes to the biological tissue.

Abstract: A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

Abstract: The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

Abstract: A pellet 4 for use in spectrometry includes a first powder 41 of a light transmitting material in a compression-molded form, and a second powder 42 which is hydrophilic and water-insoluble and is dispersedly mixed in the first powder. A sample 40 to be subjected to spectrometry is e.g. in a powdery form and dispersedly mixed in the first and the second powders 41 and 42. When the sample 40 is a hydrate, the second powder 42 exerts the effect of accelerating dehydration of the sample 40, so that stable spectrum data on the sample in the dehydrated state is obtained early. This makes it possible to perform a processing such as identification of the sample 40 early and precisely.

Abstract: A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant close to a surface of the Si melt from an upper part of a crucible in the crucible containing the Si melt or by inserting the coolant into the Si melt. A dendrite crystal is formed in the vicinity of the surface of the Si melt. Cooling is performed thereafter while maintaining a proper temperature distribution, and a Si bulk crystal is grown from an upper part toward a lower part using a lower face of the dendrite crystal as a fresh growth face.