Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: A process system 1 comprises a process apparatus 10 which performs a predetermined process on a wafer W, a plurality of detection means which detect statuses in the process apparatus 10, an abnormality detection section 15 which detects an abnormality in detection information from the plurality of detection means, an alarm generation section 16 which generates an alarm when the abnormality detection section 15 detects an abnormality, an information storage section 17 which stores the detection information from the detection means in the process apparatus 10 and alarm information as a process history of the process apparatus 10, an alarm-related information acquisition section 18 which selectively acquires information relating to an alarm selected from the information storage section 17, and a display section 21 which displays alarm-related information acquired by the alarm-related information acquisition section 18.