Abstract: A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.

Abstract: A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

Abstract: A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.

Abstract: A substrate transfer system includes a substrate storing apparatus for storing therein one or more substrates; at least one substrate processing apparatus for performing a predetermined processing on the substrate; and a substrate transfer apparatus for transferring the substrate by moving between the substrate storing apparatus and the substrate processing apparatus, the substrate transfer apparatus including at least one substrate transfer unit for supporting the substrate, unloading the substrate from the substrate storing apparatus or the substrate processing apparatus, and loading the substrate into the substrate storing apparatus of the substrate processing apparatus. The substrate transfer apparatus moves while supporting the substrate by the substrate transfer unit.

Abstract: An examination assistant device (3) is used for examination in which a process solution containing an etching solution is held in contact with an examination objective portion of a quartz pole member (21) of a semiconductor processing apparatus, and then the process solution is analyzed to identify a metal impurity contained in the examination objective portion. The pole member (21) includes a pair of concave portions (22) disposed one on either side of the examination objective portion. The examination assistant device (3) includes a pair of end plates (32) configured to engage with the pair of concave portions, a frame (30) connecting the pair of end plates, and a solution receiver (31) disposed between the pair of end plates. The solution receiver (31) has dimensions to store the process solution and hold the process solution in contact with the examination objective portion.

Abstract: A substrate processing system processes a plurality of substrates in a single-substrate processing mode by a plurality of processes and provided with a plurality of modules respectively for carrying out processes. When a defect is found in a substrate, a defective processing unit that caused the defect can be easily found out. The substrate processing system and a substrate processing method to be carried out by the substrate processing system can suppress the reduction of throughput when a large number of substrates are to be processed. The substrate processing system is provided with a plurality of modules for processing a plurality of substrates (W) in a single-substrate processing mode by a plurality of processes and includes a substrate carrying means (A4) for carrying a substrate (W) from a sending module to a receiving module, and a control means (6) for controlling the substrate carrying means (A4) on the basis of one of at least two carrying modes each assigning receiving modules to sending modules.

Abstract: In the present invention, a plurality of first units capable of accommodating the substrate and a second unit are provided, in which a substrate is carried between the first unit and the second unit. The first units and the second unit are arranged side by side in a plan view, and at least one of the plurality of the first units is a processing unit for performing processing for the substrate. The plurality of first units are arranged in a line in the horizontal direction, and at least two first units adjacent to each other in the horizontal direction of the plurality of first units are movable in the horizontal direction to be able to transfer the substrate to/from the second unit. According to the present invention, the substrate processing system including a plurality of units flexibly deals with various substrate processing recipes and reduces the processing time difference among substrates and the carriage waiting time of the substrate.

Abstract: A microwave plasma processing apparatus 100 includes a processing chamber 10, a waveguide 22, a slot antenna 23, a dielectric member 24, a first cooling unit 60 and a second cooling unit 80. As a liquid coolant flows through a flow passage 61 disposed at the slot antenna 23, the dielectric member 24 is cooled by the first cooling unit 60. The second cooling unit 80 supplies a gas to circulate through a gas intake port and a gas outlet port formed at the waveguide 22, thereby cooling the dielectric member 24. While the dielectric member 24 is thus cooled, a processing gas is raised to plasma with microwaves having been transmitted through the dielectric member 24 via the waveguide 22 and the slot antenna 23, and a substrate W is processed with the plasma thus generated.

Abstract: A structure for supporting a bellows (1) from the inside has a guiding track (8) provided inside the bellows and extending in the axial direction of the bellows. A moving member (10) is provided so as to be movable in the bellows' axial direction on the guiding track. The moving member and the bellows are connected by an intermediate supporting member (5).

Abstract: Disclosed is an inspection method for inspecting the electrical characteristics of a device by bringing an inspecting probe into electrical contact with an inspection electrode. An insulating film formed on the surface of the inspection electrode is broken by utilizing a fritting phenomenon so as to bring the inspection electrode into electrical contact with the inspection electrode.

Abstract: A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction gas generated in the vaporizer (230) is directly introduced into the reaction chamber (221A). The vaporization chamber (232) of the vaporizer (230) is a space between an upper plate (230A) and a cap (230B) attached to the upper surface of the upper plate (230A). A narrow passage (233) is formed between the cap (230B) and the upper plate (230A) which passage (233) communicates with the vaporization chamber (232).

Abstract: A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl2 and HBr. Trenches 104a, 104b are formed, as shown in FIG. 1B, in a silicon wafer 101 shown in FIG. 1A through a mask layer such as a nitride silicon layer 103. While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewalls 105a, 105b of the trenches 104a, 104b is controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.

Abstract: A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.