Abstract: A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Abstract: An ion supply device includes an ion generator for generating ions for removing static electricity, a carrier gas supply unit for supplying to the ion generator a carrier gas for carrying the ions generated in the ion generator, and an ion supply nozzle for blowing the ions and the carrier gas from the ion generator through a blow-off opening toward an electricity removal target from which static electricity is to be removed. A slit is provided at the blow-off opening and has an increased width as the slit gets distant from the electricity removal target. The ion supply nozzle includes an internal flow path and a plurality of internal fins provided at a portion of the internal flow path near the blow-off opening so that the ions and the carrier gas blown from the slit is uniformly distributed along a lengthwise direction of the slit.

Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Abstract: A circuit board for a semiconductor device inspection apparatus can have a small thermal expansion coefficient and high mechanical strength and can be easily manufactured with a reduced manufacturing cost. Furthermore, the circuit board includes a metal base body obtained by stacking and bonding a multiple number of metal plates, each having a through hole formed by an etching, such that the through holes of the metal plates are overlapped with each other to form a through hole; a resin layer formed on surfaces of the metal base body and on an inner wall surface of the through hole of the metal base body; and a conductor pattern formed to be electrically insulated from the metal base body by the resin layer.

Abstract: A substrate processing apparatus includes a substrate transit table configured to mount thereon a plurality of substrates; a substrate processing chamber configured to process the substrate one by one; a substrate transfer device capable of loading the substrate into the substrate processing chamber from the substrate transit table and unloading the substrate from the substrate processing chamber to the substrate transit table; and N number of (N is an integer equal to or larger than 3) substrate holding devices provided at the substrate transfer device and configured to hold the substrates one by one. Here, a multiplicity of (2 to N?1 number of) substrates are concurrently held by 2 to N?1 number of substrate holding devices among the N number of substrate holding devices and one substrate is loaded into the substrate processing chamber.

Abstract: There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.

Abstract: Provided is a method of controlling multiple beams directed to a structure in a workpiece, the method comprising generating a first illumination beam with a first light source and a second illumination beam with a second light source, projecting the first and second illumination beams onto a separate illumination secondary mirror, reflecting the first and second illumination beams onto an illumination primary mirror, the reflected first and second illumination beams projected onto the structure at a first and second angle of incidence respectively, the reflected first and second illumination beams generating a first and second detection beams respectively. The separate illumination secondary mirror is positioned relative to the illumination primary mirror so as make the first angle of incidence substantially the same or close to a calculated optimum first angle of incidence and make the second angle of incidence substantially the same or close to a calculated optimum second angle of incidence.

Abstract: An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF4 and Ar while a thickness of a silicon nitride film is being monitored and the etching is finished when the thickness of the silicon nitride film reaches a predetermined value. Then, a plasma etching is performed on a silicon substrate by employing an etching gas containing, for example, Cl2, HBr and Ar and using the silicon nitride film as a mask while a depth of a trench is being monitored and the etching is finished when the depth of the trench reaches a specified value.

Abstract: Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. During the reflow process, an atmosphere of a thinner vapor-containing gas is established in a processing chamber. A substrate is placed on a temperature adjusting plate. The target temperature of the temperature adjusting plate is set and controlled by a control unit, and the temperature of the temperature adjusting plate is controlled by a temperature regulator based on the target temperature set by the control unit. The control unit set and controls the target temperature so that it meets the following requirement: the atmospheric temperature?the target temperature?(the atmospheric temperature+2° C.). Due to the above, the reflowing of the resist can be performed stably, while achieving a satisfactory reflow rate although it is somewhat low.

Abstract: An probe tip position detecting method detects tip positions of a plurality of probes by using a tip position detecting device including a sensor unit for detecting tips of the probes and a movable contact body belonging to the sensor unit, the method used in inspecting electrical characteristics of an object to be inspected by bringing the object supported on a movable mounting table into electrical contact with the probes. The method includes a first step for moving the tip position detecting device by using the mounting table to thereby bring the contact the object into contact with the tips of the probes; a second step for further moving the mounting table to thereby move the contact body toward the sensor unit without causing elastic deformation to the probes; and a third step of determining a movement starting position of the contact body as the tip positions of the probes.

Abstract: A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or more substrates, wherein the dielectric film includes an initial dielectric constant having a value less than the dielectric constant of SiO2. A thermal treatment process that includes annealing the one or more substrates is performed in order to remove volatile constituents from the dielectric film on the one or more substrates and a chemical treatment process is performed on the one or more substrates, including: introducing a treating compound to the dielectric film on the one or more substrates, and heating the one or more substrates.

Abstract: A probing method including the steps of moving a main chuck to align an object of inspection on the main chuck with probes of a probe card located over the main chuck. The method includes moving the main chuck toward the probe card, thereby bringing electrodes of the object of inspection into contact with the probes, and overdriving the main chuck toward the probe card while measuring a load applied to the object of inspection by contact with the probe and controlling the movement of the main chuck in accordance with the measured load. The method also includes inspecting the electrical properties of the object of inspection using the probes.

Abstract: A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiO2 and an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF3; CHF3 and N2, for example, a mixed gas of CHF3, N2 and Ar; or a material having C, H and F and a material having N but without any material having O.

Abstract: In a metal organic chemical vapor deposition method, a parameter convertible into the number of moles of gas of an organometallic source supplied from at least one source vessel is detected. A source contained in the source vessel is heated when the parameter becomes smaller than a minimum value necessary for forming a thin film of a metal constituting the organometallic source on a substrate in a reactor. The gas of the organometallic source is quantitatively supplied to the reactor, thereby forming the thin film on the substrate. A metal organic chemical vapor deposition apparatus is also disclosed.