Abstract: There is provided a burner for decomposing nonflammable materials, which is simple in structure and capable of thermally decomposing even a material which is relatively high in thermal decomposition temperature such as CF4 at as high efficiency as 99% or more. This burner comprises a nonflammable material-containing gas-introducing nozzle (40) which is disposed at one end of a cylindrical body (2) so as to enable the nonflammable material-containing gas to be injected around the center along the direction to the central axis (L) of the cylindrical body (2), and a plurality of oxidizing agent/fuel blow-off nozzles are disposed in a manner that these nozzles are positioned on and along circular lines which are coaxial with the central axis (L) of the cylindrical body (2). These blow-off nozzles (50) are inclined in such a degree as to enable flames (f) ejected therefrom to converge onto approximately the same point on the central axis of the cylindrical body (2).

Abstract: There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24or less an area of the crystal on the substrate. A source gas is activated on a substrate consisting of a material which is not reactive with carbon. The source gas contains at least carbon and hydrogen in such a manner that the ratio of the number of carbon atoms to the total number of molecules of the source gas is 0.5% or less. Subsequently, a diamond crystal in which the (111) orientation plane is parallel to the substrate surface, and the area of the (111) orientation plane parallel to the substrate surface is precipitated on the substrate. A copper plate is preferably contains used as the substrate.

Abstract: There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24 or less an area of the crystal on the substrate.