Patents Assigned to Tokyo Sahbaura Denki Kabushiki Kaisha
  • Patent number: 4730208
    Abstract: A semiconductor device including an input circuit, in which an impurity region is formed in a semiconductor substrate under the input circuit. This impurity region has a conductivity type opposite to that of the substrate or at least has a lower impurity concentration than that of the substrate. According to this structure, the input voltage capability of the device is improved. Additionally, the fabrication methods of this semiconductor device are disclosed.
    Type: Grant
    Filed: November 21, 1986
    Date of Patent: March 8, 1988
    Assignee: Tokyo Sahbaura Denki Kabushiki Kaisha
    Inventors: Eitaro Sugino, Akira Morikuri