Abstract: A wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. A high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.

Abstract: In a measuring apparatus, a plurality of design values in design values substituted in the correction computation equations for correcting a geometrical measurement error inherent in the measuring apparatus are set as variables, the variables are optimized by a numerical solution to obtain optimized correction computation equations. A measured value is computed by using the optimized correction computation equations obtained. For optimization of the variables, a master work is measured and the variables are adjusted so that a measurement error is minimized.

Abstract: In an apparatus and a method for slicing a cylindrical semiconductor ingot into thin wafer pieces using an inner peripheral sliding blade, a grind stone shaft with a grind stone mounted to the tip end thereof is located movably axially within a rotor provided with the inner perpheral sliding blade so that the grind stone shaft and rotor can be rotated integrally but axially movable relative to each other. the grind stone and slicing blade are arranged effieciently so that, after the semiconductor ingot is sliced with the slicing blade, the grind stone approaches the end face of the ingot to grind it. This can save a lapping step, thereby improving working efficiency.